switching P Channel Power MOSFET JSCJ CJAB35P03 with high density cell design and thermal stability
Key Attributes
Model Number:
CJAB35P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
35A
RDS(on):
9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
278pF
Number:
1 P-Channel
Input Capacitance(Ciss):
2.28nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
38nC
Mfr. Part #:
CJAB35P03
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB35P03 is a P-Channel Power MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Its high-density cell design and special process technology provide ultra-low RDS(ON), high ESD capability, and good stability. It is suitable for a wide range of applications, including battery and loading switching, offering excellent heat dissipation through its package design.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB35P03
- Package: PDFNWB3.33.3-8L
- Marking: CJAB35P03
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (1) | -35 | A | ||
| Pulsed Drain Current | IDM | -140 | A | |||
| Single Pulsed Avalanche Energy | EAS | (1) | 240 | mJ | ||
| Power Dissipation | PD | 41.67 | W | |||
| Thermal Resistance Junction to Ambient | RJA | (2) | 150 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Lead Temperature for Soldering | TL | (1/8 from case for 10s) | 260 | |||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V, VGS =0V | -1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.0 | -1.6 | -2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-12A | 9 | 15 | m | |
| Static drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID =-12A | 14 | 25 | m | |
| Forward transconductance | gFS | VDS =-10V, ID =-12A | 22 | S | ||
| Input capacitance | Ciss | VDS =-15V,VGS =0V, f =1MHz | 2280 | pF | ||
| Output capacitance | Coss | 385 | pF | |||
| Reverse transfer capacitance | Crss | 278 | pF | |||
| Total gate charge | Qg | VDD=-15V,ID=-1A,RL=15 VGS=-10V,RG=2.5 | 38 | nC | ||
| Gate-source charge | Qgs | 7 | nC | |||
| Gate-drain charge | Qg | 9 | nC | |||
| Turn-on delay time | td(on) | VDS=-15V,ID=-12A, VGS=-10V | 10 | ns | ||
| Turn-on rise time | tr | 22 | ns | |||
| Turn-off delay time | td(off) | 36 | ns | |||
| Turn-off fall time | tf | 9 | ns | |||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-12A | -0.8 | -1.2 | V | |
| Continuous drain-source diode forward current | IS | -35 | A | |||
| Pulsed drain-source diode forward current | ISM | -140 | A |
2410121806_JSCJ-CJAB35P03_C504071.pdf
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