Low Gate Charge Power MOSFET JSCJ CJAC110N03A with Plastic Encapsulate Package and Lead Free Status
Key Attributes
Model Number:
CJAC110N03A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
110A
RDS(on):
4.3mΩ@4.5V,10A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
582pF
Number:
1 N-channel
Output Capacitance(Coss):
648pF
Input Capacitance(Ciss):
5.372nF
Pd - Power Dissipation:
65W
Gate Charge(Qg):
100nC@10V
Mfr. Part #:
CJAC110N03A
Package:
PDFNWB5x6-8L
Product Description
Product Overview
The CJAC110N03A is an N-Channel Power MOSFET utilizing trench technology and design to achieve excellent RDS(ON) with low gate charge. It offers high power and current handling capability, making it suitable for a wide range of applications including SMPS, general purpose applications, hard switched and high frequency circuits, Uninterruptible Power Supply, and power management. Its high density cell design ensures ultra low RDS(ON), good stability and uniformity with high EAS, and an excellent package for effective heat dissipation. This lead-free product is acquired.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC110N03A
- Package: PDFNWB56-8L
- Material: Plastic-Encapsulate MOSFETS
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 110 | A | |||
| Pulsed Drain Current | IDM | 440 | A | |||
| Single Pulsed Avalanche Energy | EAS | 62.5 | mJ | |||
| Power Dissipation | PD | TC=25 | 1.9 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | 65 | °C/W | |||
| Thermal Resistance from Junction to Case | RJC | 2.7 | °C/W | |||
| Junction Temperature and Storage Temperature Range | TJ Tstg | -55 | ~+150 | °C | ||
| Off characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1.0 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| On characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1.0 | 1.5 | 2.5 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =20A | 1.8 | mΩ | ||
| Static drain-source on-sate resistance | RDS(on) | VGS =4.5V, ID =10A | 2.7 | mΩ | ||
| Dynamic characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 5372 | pF | ||
| Output capacitance | Coss | 648 | pF | |||
| Reverse transfer capacitance | Crss | 582 | pF | |||
| Switching characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=15V, ID=24A | 89 | nC | ||
| Gate-source charge | Qgs | 25 | nC | |||
| Gate-drain charge | Qg d | 18 | nC | |||
| Turn-on delay time | td(on) | VDS=15V, VGS=10V,RG=1Ω, RL=0.75Ω | 13 | ns | ||
| Turn-on rise time | tr | 20 | ns | |||
| Turn-off delay time | td(off) | 100 | ns | |||
| Turn-off fall time | tf | 13 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 110 | A | |||
| Pulsed drain-source diode forward current | ISM | 440 | A | |||
2410121736_JSCJ-CJAC110N03A_C19267732.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
