N Channel MOSFET JSCJ CJ3402 Featuring Low Gate Charge and High Current Capability for PWM Control
Key Attributes
Model Number:
CJ3402
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Input Capacitance(Ciss):
390pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
4.34nC
Mfr. Part #:
CJ3402
Package:
SOT-23
Product Description
Product Overview
The CJ3402 is an N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation down to 2.5V gate voltage. This device is ideal for load switch and PWM applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJ3402
- Package: SOT-23
- Certifications: Lead free product is acquired
- Marking: R2
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | 4 | A | |||
| Pulsed Drain Current | IDM | note 1 | 15 | A | ||
| Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance Junction to Ambient | RθJA | note 2 | 357 | °C/W | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±12V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 0.6 | 1.4 | V | |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =4A | 55 | mΩ | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =3A | 70 | mΩ | ||
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =2A | 110 | mΩ | ||
| Forward transconductance | gFS | VDS =15V, ID =4A | 8 | S | ||
| Diode forward voltage | VSD | IS=1A, VGS = 0V | 1 | V | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | 390 | pF | |||
| Output capacitance | Coss | 54.5 | pF | |||
| Reverse transfer capacitance | Crss | VDS =15V,VGS =0V,f =1MHz | 41 | Pf | ||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 3 | Ω | ||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | 3.3 | ns | |||
| Turn-on rise time | tr | 1 | ns | |||
| Turn-off delay time | td(off) | 21.7 | ns | |||
| Turn-off fall time | tf | VGS=10V,VDS=15V, RL=3.75Ω,RGEN=6Ω | 2.1 | ns | ||
| Total gate charge | Qg | 4.34 | nC | |||
| Gate-source Charge | Qgs | 0.6 | nC | |||
| Gate-drain Charge | Qg d | VDS =15V,VGS =4.5V,ID =4A | 1.38 | nC | ||
| Body diode reverse recovery time | t. | 1.2 | ns | |||
| Body diode reverse recovery charge | Qrr | IF=4A,dI/dt=100A/µs | 6.3 | nC | ||
2410121322_JSCJ-CJ3402_C59515.pdf
Related Products
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
