Power MOSFET JSCJ CJBD3020 featuring special process technology for enhanced ESD and stable performance
Key Attributes
Model Number:
CJBD3020
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-
RDS(on):
9.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
100pF
Number:
2 N-Channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
823pF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
CJBD3020
Package:
PDFNWB-8(3x3)
Product Description
Product Overview
The CJBD3020 is a N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and uninterruptible power supplies. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, excellent package for heat dissipation, and special process technology for high ESD capability.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJBD3020
- Package Type: PDFNWB3.3x3.3-8L-B
- Marking: D3020
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics (note1) | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.8 | 3.0 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =10A | 9.5 | 15 | m | |
| VGS =4.5V, ID =10A | 14.5 | 20 | m | |||
| Forward transconductance | gFS | VDS =5V, ID =20A | 15 | S | ||
| Dynamic Characteristics (note 2) | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 823 | pF | ||
| Output capacitance | Coss | 138 | ||||
| Reverse transfer capacitance | Crss | 100 | ||||
| Switching Characteristics (note 2) | ||||||
| Total gate charge | Qg | VDS=15V, VGS=10V, ID=9A | 14 | nC | ||
| Gate-source charge | Qgs | 3.5 | ||||
| Gate-drain charge | Qg d | 4.5 | ||||
| Turn-on delay time | td(on) | VDD=15V,VGS=10V, RL=1.8,RG=1.8 | 10 | ns | ||
| Turn-on rise time | tr | 8 | ||||
| Turn-off delay time | td(off) | VDD=15V,VGS=10V, RL=1.8,RG=1.8 | 30 | ns | ||
| Turn-off fall time | tf | 5 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 20 | A | |||
| Pulsed drain-source diode forward current | ISM | 100 | A | |||
| Reverse Recovery Time | trr | TJ = 25C, IF = 10A, di/dt = 100A/s(Note1) | 22 | 35 | ns | |
| Reverse Recovery Charge | Qrr | TJ = 25C, IF = 10A, di/dt = 100A/s(Note1) | 12 | 20 | nC | |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | Ta=25 | 30 | V | ||
| Gate-Source Voltage | VGS | Ta=25 | 20 | V | ||
| Continuous Drain Current | ID | Ta=25 | 20 | A | ||
| Pulsed Drain Current | IDM | Ta=25 | 100 | A | ||
| Single Pulsed Avalanche Energy | EAS | (1) | 70 | mJ | ||
| Power Dissipation | PD | Ta=25 | 1.5 | W | ||
| Thermal Resistance Junction to Ambient | RJA | 83.3 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10s) | 260 | |||
2411121115_JSCJ-CJBD3020_C504189.pdf
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