N Channel Power MOSFET JSCJ CJU04N65 650V 4A TO252 Package Suitable for DC DC Converter Applications
Key Attributes
Model Number:
CJU04N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Output Capacitance(Coss):
180pF
Pd - Power Dissipation:
48W
Input Capacitance(Ciss):
760pF
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
CJU04N65
Package:
TO-252-2L
Product Description
Product Overview
The CJU04N65 is an N-channel mode power MOSFET utilizing advanced planar stripe technology. This design ensures minimal on-state resistance and superior switching performance, with the capability to withstand high energy pulses in avalanche and commutation modes. It is ideal for high-efficiency switch mode power supplies and other power switching applications, including DC/DC converters.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: TO-252-2L Plastic-Encapsulate MOSFETS
- Marking: U04N65= Device code; Solid dot = Green molding compound device (if present)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current | ID | TC=25 | 4.0 | A | ||
| Pulsed Drain Current | IDM | 16 | A | |||
| Single Pulsed Avalanche Energy | EAS | 280 | mJ | |||
| Power Dissipation | PD | TC=25 | 48 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | Mounted on 1 in FR-4 board, 2oz. Copper, still air | 100 | /W | ||
| Thermal Resistance from Junction to Case | RJC | 2.6 | /W | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | |||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 650 | V | ||
| Drain-source diode forward voltage | VSD | VGS = 0V, IS =4.0A | 1.5 | V | ||
| Zero gate voltage drain current | IDSS | VDS =600V, VGS =0V | 25 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =30V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 2.0 | 4.0 | V | |
| Static drain-source on-resistance | RDS(on) | VGS =10V, ID =2.0A | 3.0 | |||
| Input capacitance | Ciss | VDS =25V,VGS =0V,f =1MHz | 760 | pF | ||
| Output capacitance | Coss | 180 | ||||
| Reverse transfer capacitance | Crss | 20 | ||||
| Total gate charge | Qg | VDS =480V,VGS =10V,ID =4.0A | 5.0 | nC | ||
| Gate-source charge | Qgs | 2.7 | ||||
| Gate-drain charge | Qgd | 2.0 | ||||
| Turn-on delay time | td(on) | VDD=300V, VGS=10V, RG=9.1, ID =4.0A, Starting TJ = 25 | 20 | ns | ||
| Turn-on rise time | tr | 10 | ||||
| Turn-off delay time | td(off) | 40 | ||||
| Turn-off fall time | tf | 20 |
2410121931_JSCJ-CJU04N65_C2910353.pdf
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