Power MOSFET JSCJ CJ1012 C Single N Channel Device Featuring Low Threshold Voltage and ESD Protection
Key Attributes
Model Number:
CJ1012 C
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
850mΩ@2.5V,500mA
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
16pF
Input Capacitance(Ciss):
100pF
Pd - Power Dissipation:
275mW
Gate Charge(Qg):
-
Mfr. Part #:
CJ1012 C
Package:
SOT-523-3
Product Description
Product Overview
The CJ1012 is a Single N-Channel Power MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed using an advanced Power Trench process to optimize RDS(ON). This MOSFET offers high-side switching, low on-resistance, low threshold voltage, and fast switching speed, making it suitable for various driver and power switching applications in battery-operated systems and power supply converters. It also features ESD protection.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJ1012
- Package: SOT-523
- Color: Solid dot = Green molding compound device, if none, the normal device.
- Website: www.cj-elec.com
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | ID(DC) | 500 | mA | |||
| Drain Current -Pulsed(note1) | IDM(pulse) | 1000 | mA | |||
| Power Dissipation (note 2 , Ta=25) | PD | 150 | mW | |||
| Maximum Power Dissipation (note 3 , Tc=25) | PD | 275 | mW | |||
| Thermal Resistance from Junction to Ambient | RJA | 833 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 455 | /W | |||
| Storage Temperature | Tstg | -55 | ~ | +150 | ||
| Junction Temperature | Tj | 150 | ||||
| Electrical Characteristics (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 0.45 | 0.8 | 1.2 | V |
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =±4.5V | ±1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =16V, VGS =0V | 100 | nA | ||
| Drain-Source On-State Resistance | RDS(on) | VGS =4.5V, ID =600mA | 250 | 700 | mΩ | |
| VGS =2.5V, ID =500mA | 330 | 850 | ||||
| Forward Transconductance | gFS | VDS =10V, ID =400mA | 1 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =16V,VGS =0V,f =1MHz | 100 | pF | ||
| Output Capacitance | Coss | VDS =16V,VGS =0V,f =1MHz | 16 | |||
| Reverse Transfer Capacitance | Crss | VDS =16V,VGS =0V,f =1MHz | 12 | |||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V, ID =250mA | 750 | nC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V, ID =250mA | 75 | |||
| Gate-Drain Charge | Qg | VDS =10V,VGS =4.5V, ID =250mA | 225 | |||
| Switching Times (note 4) | ||||||
| Turn-On Delay Time | td(on) | VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω | 5 | nS | ||
| Rise Time | tr | VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω | 5 | |||
| Turn-Off Delay Time | td(off) | VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω | 25 | |||
| Fall Time | tf | VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω | 11 | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | IS=0.15A, VGS = 0V | 1.2 | V | ||
2410121614_JSCJ-CJ1012-C_C147851.pdf
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