PNP Transistor Model JTD JTDBC857BW SOT323 Package Perfect for Switching and Audio Frequency Amplifier
Key Attributes
Model Number:
JTDBC857BW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Transition Frequency(fT):
100MHz
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
JTDBC857BW
Package:
SOT-323
Product Description
Product Overview
The BC856BW, BC857BW, and BC858BW are PNP transistors ideally suited for automatic insertion. They are designed for switching and AF amplifier applications.
Product Attributes
- Brand: SHENZHEN JTD ELECTRONICS CO.,LTD
- Origin: Shenzhen
- Material: Plastic-Encapsulated Transistors
- Package Type: SOT-323
Technical Specifications
| Model | Parameter | Value | Unit | Conditions |
|---|---|---|---|---|
| BC856BW | Collector-Base Voltage (VCBO) | -80 | V | |
| -65 | V | IC= -10mA, IB=0 | ||
| Collector-Emitter Voltage (VCEO) | -65 | V | ||
| Collector Current (IC) -Continuous | -0.1 | A | ||
| Collector Power Dissipation (PC*) | 150 | mW | Ta=25 | |
| BC857BW | Collector-Base Voltage (VCBO) | -50 | V | |
| -45 | V | IC= -10mA, IB=0 | ||
| Collector-Emitter Voltage (VCEO) | -45 | V | ||
| Collector Current (IC) -Continuous | -0.1 | A | ||
| Collector Power Dissipation (PC*) | 150 | mW | Ta=25 | |
| BC858BW | Collector-Base Voltage (VCBO) | -30 | V | |
| -30 | V | IC= -10mA, IB=0 | ||
| Collector-Emitter Voltage (VCEO) | -30 | V | ||
| Collector Current (IC) -Continuous | -0.1 | A | ||
| Collector Power Dissipation (PC*) | 150 | mW | Ta=25 | |
| All Models | Emitter-Base Voltage (VEBO) | -5 | V | IE= -1A, IC=0 |
| Collector Cut-off Current (ICBO) | -15 | nA | VCB= -30 V , IE=0 | |
| DC Current Gain (hFE) | 125 | VCE= -5V, IC= -2mA (BC856AW, 857AW,858AW) | ||
| 220 | VCE= -5V, IC= -2mA (BC856BW, 857BW,858BW) | |||
| 420 | VCE= -5V, IC= -2mA (BC857CW,BC858CW) | |||
| Collector-Emitter Saturation Voltage (VCE(sat)) | -0.65 | V | IC=-100mA, IB= -5mA | |
| Base-Emitter Saturation Voltage (VBE(sat)) | -1.1 | V | IC= -100mA, IB= -5mA | |
| Transition Frequency (fT) | 100 | MHz | VCE= -5V, IC= -10mA, f=100MHz | |
| Collector Capacitance (Cob) | 4.5 | pF | VCB=-10V, f=1MHz | |
| Junction and Storage Temperature Range (TJ,Tstg) | -55+150 | |||
| Thermal Resistance (RJA) | 833 | /W | From Junction To Ambient | |
| Device Marking | See Datasheet |
2507081835_JTD-JTDBC857BW_C49308267.pdf
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