PNP Transistor JUXING MMBTA42 1D SOT23 Small Outline Plastic Package High Voltage 300V Collector Current

Key Attributes
Model Number: MMBTA42 1D
Product Custom Attributes
Current - Collector Cutoff:
250nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
50MHz
Type:
NPN
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBTA42 1D
Package:
SOT-23
Product Description

Product Overview

The MMBTA42 is a PNP transistor designed for high voltage applications. It offers high stability and reliability, with a maximum power dissipation of 350mW. It is complementary to the MMBTA92.

Product Attributes

  • Marking: 1D
  • Package: SOT-23 Small Outline Plastic Package
  • Epoxy UL Flammability Rating: 94V-0
  • Mounting Position: Any

Technical Specifications

ParametersSymbolValueUnitTest ConditionMinMax
Collector-Base VoltageVCBO300V
Collector-Emitter VoltageVCEO300V
Emitter-Base VoltageVEBO5V
Collector Current-ContinuousIC300mA
Collector Power DissipationPC350mW
Junction TemperatureTj150
Storage TemperatureTstg-55-+150
Thermal resistance From junction to ambientRJA357/W
Collector-base breakdown voltageV(BR)CBO300VIC=100uA, IE=0300
Collector-emitter breakdown voltageV(BR)CEO300VIC=1mA, IB=0300
Emitter-base breakdown voltageV(BR)EBO5VIE=10uA, IC=05
Collector cut-off currentICBO250nAVCB=200V, IE=0250
Emitter cut-off currentIEBO100nAVEB=5V, IC=0100
DC current gainhFE(1)*VCE=10V, IC=1mA60
DC current gainhFE(2)*VCE=10V, IC=10mA100200
DC current gainhFE(3)*VCE=10V, IC=30mA65
Collector-emitter saturation voltageVCE(sat)*VIC=20mA, IB=2mA0.20
Base -emitter saturation voltageVBE(sat)*VIC=20mA, IB=2mA0.90
Transition frequencyfT50MHzVCE=20V, IC=100mA; f=30MHz

*Pulse test: pulse width300us, duty cycle2.0%.


2508141643_JUXING-MMBTA42-1D_C5365526.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.