SOT 23 Plastic Encapsulate P Channel MOSFET JSCJ CJ2321 Ideal for Load Switch and PA Switch Circuits
Key Attributes
Model Number:
CJ2321
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.9A
Operating Temperature -:
-50℃~+150℃
RDS(on):
110mΩ@1.8V,2.3A
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
1 P-Channel
Input Capacitance(Ciss):
715pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
13nC
Mfr. Part #:
CJ2321
Package:
SOT-23
Product Description
Product Overview
The CJ2321 is a P-Channel MOSFET in a SOT-23 package designed for applications such as PA switches and load switches. It features TrenchFET technology for enhanced performance.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23
- Material: Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | (Ta=25) | -2.9 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | -12 | A | ||
| Continuous Source-Drain Diode Current | IS | -0.59 | A | |||
| Maximum Power Dissipation | PD | (Ta=25) | 0.35 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | 357 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -50 | +150 | |||
| Electrical Characteristics (Ta=25 unless otherwise noted) | ||||||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-10µA | -20 | V | ||
| Gate-source leakage | IGSS | VDS =0V, VGS =±12V | ±100 | nA | ||
| Zero Gate voltage drain current | IDSS | VDS =-16V, VGS =0V | -1.0 | µA | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -0.4 | -0.9 | V | |
| Drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID =-3.3A | 57 | mΩ | ||
| VGS =-2.5V, ID =-2.8A | 76 | |||||
| VGS =-1.8V, ID =-2.3A | 110 | |||||
| Forward tranconductance | gfS | VDS =-5V, ID =-3.3A | 3 | S | ||
| Forward diode voltage | VSD | VGS =0V,IS=-1.6A | -1.2 | V | ||
| Dynamic Characteristics (VDS =-6V,VGS =0V,f =1MHz) | ||||||
| Input capacitance | Ciss | 715 | pF | |||
| Output capacitance | Coss | 170 | ||||
| Reverse transfer capacitance | Crss | 120 | ||||
| Charge (VDS =-6V,VGS =-4.5V,ID=-3.3A) | ||||||
| Total Gate charge | Qg | 13 | nC | |||
| Gate-Source charge | Qgs | 1.2 | nC | |||
| Gate-Drain charge | Qg d | 2.2 | nC | |||
| Switching Characteristics (VGEN=-4.5V,VDD=-6V, ID =-1.0A,RG=6Ω, RL=6Ω) | ||||||
| Turn-on delay Time | td(on) | 25 | ns | |||
| Rise time | tr | 55 | ||||
| Turn-off delay time | td(off) | 90 | ||||
| Fall time | tf | 60 | ||||
2410121333_JSCJ-CJ2321_C77898.pdf
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