Power MOSFET JSCJ CJAC110SN10H N Channel with High Density Cell Design and Thermal Management Package
Key Attributes
Model Number:
CJAC110SN10H
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
110A
RDS(on):
5.2mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24pF
Number:
1 N-channel
Output Capacitance(Coss):
1.376nF
Input Capacitance(Ciss):
6.134nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
142nC@15V
Mfr. Part #:
CJAC110SN10H
Package:
PDFNWB5x6-8L
Product Description
Product Overview
The CJAC110SN10H is a N-Channel Power MOSFET utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications requiring high power and current handling capabilities, such as load switches, SMPS, general purpose applications, hard switched and high frequency circuits, Uninterruptible Power Supply, and power management. The device features a high-density cell design for ultra-low RDS(ON), good stability with high EAS, and an excellent package for efficient heat dissipation. It is a lead-free product.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC110SN10H
- Material: Plastic-Encapsulate MOSFETS
- Package: PDFNWB56-8L
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | Ta=25 | 110 | A | ||
| Pulsed Drain Current | IDM | 390 | A | |||
| Single Pulsed Avalanche Energy | EAS | 400 | mJ | |||
| Power Dissipation | PD | Ta=25 | 130 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | 62.5 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 0.96 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | 150 | |||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250uA | 100 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =80V, VGS = 0V | 1.0 | μA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250uA | 4.0 | V | ||
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =20A | 4.5 | 5.2 | mΩ | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =50V,VGS =0V, f =100KHz | 95 | pF | ||
| Output capacitance | Coss | 214 | pF | |||
| Reverse transfer capacitance | Crss | 30 | pF | |||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=15V, VDS=50V, ID=20A | 161 | nC | ||
| Gate-source charge | Qgs | 688 | nC | |||
| Gate-drain charge | Qgd | 1376 | nC | |||
| Turn-on delay time | td(on) | VDS=50V,ID=5A , VGS=10V,RG=2.7Ω | 24 | ns | ||
| Turn-on rise time | tr | 3.0 | ns | |||
| Turn-off delay time | td(off) | 71 | ns | |||
| Turn-off fall time | tf | 12 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=25A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 110 | A | |||
| Pulsed drain-source diode forward current | ISM | 390 | A | |||
2410121908_JSCJ-CJAC110SN10H_C19267745.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
