Load Switch Battery Protection P Channel MOSFET JSCJ CJ4459A Featuring Low Resistance SOT 23 Package
Key Attributes
Model Number:
CJ4459A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
57mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
54.6pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
2W
Input Capacitance(Ciss):
683pF@15V
Gate Charge(Qg):
11.4nC@10V
Mfr. Part #:
CJ4459A
Package:
SOT-23
Product Description
Product Overview
The CJ4459A is a P-Channel MOSFET that leverages advanced trench MOSFET technology and a low-resistance package to achieve extremely low RDS(ON). This device is ideally suited for load switch and battery protection applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: 4459A
- Package Type: SOT-23 Plastic-Encapsulate MOSFETS
- Marking: 4459A
- Color: Solid dot = Green molding compound device if none, the normal device
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings (TJ=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -5 | A | |||
| Pulsed Drain Current | IDM | -30 | A | |||
| Power Dissipation | PD | 62.5 | mW | |||
| Thermal Resistance Junction to Ambient | RJA | 62.5 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics (Notes: 1.TA=25. 2.Limited only by maximum temperature allowed. 3.Pulse Test : Pulse Width380s, duty cycle 2%. 4.Device mounted on 1 in2 FR-4 board with 2-sided 2oz. Copper, in a still air environment with TA=25 .) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-30V, VGS =0V | -1.0 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.0 | -1.6 | -2.5 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =-10V, ID =-5A | 37 | m | ||
| VGS =-4.5V, ID =-5A | 44 | m | ||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V, f =1MHz | 683 | pF | ||
| Output capacitance | Coss | 97 | ||||
| Reverse transfer capacitance | Crss | 54.6 | ||||
| Total gate charge | Qg | VGS=-10V, VDD=-15V, ID=-5A | 11.4 | nC | ||
| Gate-source charge | Qgs | 5.6 | ||||
| Gate-drain charge | Qg d | 2.1 | ||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-1A | -1.0 | V | ||
| Continuous drain-source diode forward current | IS | -5 | A | |||
| Pulsed drain-source diode forward current | ISM | -30 | A | |||
| Forward tranconductance | gFS | VDS =-5V, ID =-5A | 6.5 | S | ||
| Gate resistance | Rg | f =1MHz | 14 | |||
2410121744_JSCJ-CJ4459A_C5441190.pdf
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