JSCJ AD 2N7002KW N Channel MOSFET Suitable for Voltage Controlled Switching and Portable Electronics
Key Attributes
Model Number:
AD-2N7002KW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
RDS(on):
2.5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
200mW
Mfr. Part #:
AD-2N7002KW
Package:
SOT-323
Product Description
Product Overview
The AD-2N7002KW is an N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It features a high-density cell design for low RDS(ON), making it suitable as a voltage-controlled small signal switch. This rugged and reliable MOSFET offers high saturation current capability, ESD protection, and is AEC-Q101 qualified. It is ideal for applications such as load switches for portable devices and DC/DC converters.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Model: AD-2N7002KW
- Package: Plastic-Encapsulated MOSFET (SOT-323)
- Certifications: AEC-Q101 qualified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Static Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = 250A | 60 | - | - | V |
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 1mA | 1 | 1.3 | 2.5 | V |
| Zero gate voltage drain current | IDSS | VDS = 48V, VGS = 0V | - | - | 1.0 | A |
| Gate-body leakage current | IGSS | VGS = 20V, VDS = 0V | - | - | 10 | A |
| Drain-source on-state resistance | RDS(on) | VGS = 10V, ID = 500mA | - | 0.9 | 2.5 | |
| VGS = 4.5V, ID = 200mA | - | 1.1 | 3 | |||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS = 10V, VGS = 0V, f = 1MHz | - | - | 40 | pF |
| Output capacitance | Coss | - | - | 30 | pF | |
| Reverse transfer capacitance | Crss | - | - | 10 | pF | |
| Switching Parameters | ||||||
| Turn-on delay time | td(on) | VGS = 10V, VDS = 50V, RG = 50, RGS = 50, RL = 250 | - | - | 10 | ns |
| Turn-off delay time | td(off) | - | - | 15 | ns | |
| Reverse recovery time | trr | VGS = 0V, IS = 300mA, VR = 25V, dIS/dt = -100A/s | - | 30 | - | ns |
| Recovered charge | Qr | VGS = 0V, IS = 300mA, VR = 25V, dIS/dt = -100A/s | - | 30 | - | nC |
| GATE-SOURCE ZENER DIODE | ||||||
| Gate-source breakdown voltage | BVGSO | IGS = 1mA (open drain) | 21.5 | - | 30 | V |
| DRAIN-SOURCE DIODE | ||||||
| Drain forward voltage | VSD | IS = 300mA, VGS = 0V | - | - | 1.5 | V |
| Continuous Diode Forward Current | IS | - | - | 0.2 | A | |
| Pulsed Diode Forward Current | ISM | - | - | 0.53 | A | |
2410121714_JSCJ-AD-2N7002KW_C2975698.pdf
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