Dual N Channel MOSFET JSCJ CJAE2002 offering common drain design and enhanced ESD protection features
Key Attributes
Model Number:
CJAE2002
Product Custom Attributes
Drain To Source Voltage:
18V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-40℃~+150℃
RDS(on):
4.4mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
285pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.97nF@10V
Pd - Power Dissipation:
3W
Gate Charge(Qg):
26.5nC@4.5V
Mfr. Part #:
CJAE2002
Package:
TDFN-8-EP(3x3)
Product Description
Product Description
The CJAE2002 is a Dual N-Channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for use as a uni-directional or bi-directional load switch due to its common-drain configuration.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJAE2002
- Package: DFNWB33-8 -L
- Material: Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 18 | - | - | V |
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | - | - | 1 | A |
| Gate-body leakage current | IGSS | VGS =4.5V, VDS = 0V | - | - | 1 | A |
| Gate-body leakage current | IGSS | VGS =8V, VDS = 0V | - | - | 10 | A |
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.4 | - | 1 | V |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =3A | - | 4.4 | 5.5 | m |
| Drain-source on-resistance | RDS(on) | VGS =4.0V, ID =3A | - | 4.6 | 5.8 | m |
| Drain-source on-resistance | RDS(on) | VGS =3.8V, ID =3A | - | 4.9 | 6.0 | m |
| Drain-source on-resistance | RDS(on) | VGS =3.1V, ID =3A | - | 5.4 | 6.3 | m |
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =3A | - | 6.5 | - | m |
| Forward tranconductance | gFS | VDS =5V, ID =3A | - | 8 | - | S |
| Diode forward voltage | VSD | IS=1A, VGS = 0V | - | - | 1 | V |
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | - | 1970 | - | pF |
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | - | 42 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | - | 13 | - | pF |
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =3A | - | 26.5 | - | nC |
| Gate-source charge | Qgs | VDS =10V,VGS =4.5V,ID =3A | - | 2.4 | - | nC |
| Gate-drain charge | Qgd | VDS =10V,VGS =4.5V,ID =3A | - | 7.6 | - | nC |
| Turn-on delay time | td(on) | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | - | 4.5 | - | ns |
| Turn-on rise time | tr | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | - | 8.9 | - | ns |
| Turn-off delay time | td(off) | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | - | 85 | - | ns |
| Turn-off fall time | tf | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | - | 24 | - | ns |
| Continuous Drain Current | ID | TC = 25 C | - | - | 55 | A |
| Continuous Drain Current | ID | TC = 100 C | - | - | 35 | A |
| Pulsed Drain Current | IDM | (1),(2) | - | - | 100 | A |
| Total Power Dissipation | PD | TA = 25 C | - | 3 | - | W |
| Total Power Dissipation | PD | TA = 70 C | - | - | (3) | W |
| Drain-Source Voltage | VDS | - | 18 | - | - | V |
| Gate-Source Voltage | VGS | - | 12 | - | - | V |
| Junction Temperature | Tj | - | - | - | 150 | |
| Storage Temperature | Tstg | - | -55 | - | +150 | |
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10 s) | - | - | 260 | |
| Thermal Resistance Junction to Ambient | RJA | (1) | - | - | 42 | /W |
2410121806_JSCJ-CJAE2002_C504185.pdf
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