Durable P Channel Power MOSFET JSCJ CJQ4435S Designed for Battery Switch and Load Switch Applications
Key Attributes
Model Number:
CJQ4435S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
145pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.4nF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
CJQ4435S
Package:
SOP-8
Product Description
Product Overview
The CJQ4435S is a P-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology. It offers excellent RDS(on), shoot-through immunity, superior body diode characteristics, and ultra-low gate resistance. This device is ideally suited for use as a low-side switch in Notebook CPU core power conversion applications, including battery switches and load switches.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJQ4435S
- Package: SOP8 Plastic-Encapsulate
- Marking: Q4435S
- Dot Indicator: Solid dot = Pin 1 indicator, Solid dot = Green molding compound device (if present)
- Date Code: YY
- Origin: Jiangsu Changjing Electronics Technology Co., Ltd
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-30V, VGS =0V | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =-250A | -1.0 | -1.5 | -3.0 | V |
| Static Drain-Source On-State Resistance | RDS(on) | VGS =-10V, ID =-7.3A | 18 | 24 | m | |
| VGS =-4.5V, ID =-6.9A | 26 | 35 | m | |||
| Forward Transconductance | gFS | VDS =-10V, ID =-7.3A | 12 | S | ||
| Input Capacitance | Ciss | VDS =-15V,VGS =0V, f =1MHz | 1400 | pF | ||
| Output Capacitance | Coss | 165 | ||||
| Reverse Transfer Capacitance | Crss | 145 | ||||
| Total Gate Charge | Qg | VDS=-15V, VGS=-10V, ID=-7.3A | 42 | nC | ||
| VDS=-15V, VGS=-4.5V, ID=-7.3A | 25 | |||||
| Gate-Source Charge | Qgs | VDS=-15V, VGS=-10V, ID=-7.3A | 7 | nC | ||
| Gate-Drain Charge | Qgd | VDS=-15V, VGS=-10V, ID=-7.3A | 12 | nC | ||
| Turn-on Delay Time | td(on) | VDS=-15V, VGS=-10V, ID=-7.3A | 15 | ns | ||
| VDD=-15V,ID=-1A, VGS=-10V,RG=1, RL=15 | 15 | |||||
| Turn-on Rise Time | tr | VDS=-15V, VGS=-10V, ID=-7.3A | ||||
| Turn-off Delay Time | td(off) | VDS=-15V, VGS=-10V, ID=-7.3A | 70 | |||
| Turn-off Fall Time | tf | VDD=-15V,ID=-1A, VGS=-10V,RG=1, RL=15 | 25 | ns | ||
| Drain-Source Diode Forward Voltage | VSD | VGS =0V, IS=-2A | -1.2 | V | ||
| Continuous Drain-Source Diode Forward Current | IS | -7.3 | A | |||
| Pulsed Drain-Source Diode Forward Current | ISM | -27 | A | |||
| Continuous Drain Current | ID | Ta=25 | -7.3 | A | ||
| Pulsed Drain Current | IDM | -27 | A | |||
| Power Dissipation | PD | Ta=25 | 1.4 | W | ||
| Thermal Resistance Junction to Ambient | RJA | 89 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Single Pulsed Avalanche Energy | EAS | (1) | 20 | mJ |
2410121619_JSCJ-CJQ4435S_C504136.pdf
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