Power MOSFET JSCJ CJU50SN10 N Channel Device with Excellent RDS ON and Lead Free Plastic Encapsulate
Key Attributes
Model Number:
CJU50SN10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16.5mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
9.4pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
975.3pF@50V
Gate Charge(Qg):
15.7nC@10V
Mfr. Part #:
CJU50SN10
Package:
TO-252-2L
Product Description
Product Overview
The CJU50SN10 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications requiring high power and current handling capabilities, such as SMPS, general purpose applications, hard switched and high frequency circuits, uninterruptible power supplies, and power management. Its high density cell design contributes to ultra-low RDS(ON), and it features good stability and uniformity with high EAS, along with an excellent package for good heat dissipation. This product is lead-free.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJU50SN10
- Package Type: TO-252-2L
- Material: Plastic-Encapsulate
- Color: Normal device (or Green molding compound device if marked with Solid dot)
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 50 | A | |||
| Pulsed Drain Current | IDM | (1) | 170 | A | ||
| Maximum Power Dissipation | PD | (4) | 50 | W | ||
| Avalanche energy | EAS | * | 80 | mJ | ||
| Thermal Resistance from Junction to Case | RJC | 2.5 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55~ +150 | ||||
| Thermal Resistance from Junction to Ambient | RJA | (3) | 62 | /W | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =100V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage | VGS(th) | (1) VDS =VGS, ID =250A | 1.0 | 2.5 | V | |
| Drain-source on-resistance | RDS(on) | (1) VGS =10V, ID =10A | 16.5 | 22 | m | |
| Forward tranconductance | gFS | (1) VDS =5.0V, ID =20A | 51 | S | ||
| Dynamic characteristics | ||||||
| Total gate charge | Qg | (2) VDS =50V,VGS =10V,ID =5A | 15.7 | nC | ||
| Gate-source charge | Qgs | 2.6 | ||||
| Gate-drain charge | Qg d | 4.0 | ||||
| Input Capacitance | Ciss | (2) VDS =50V,VGS =0V,f =100kHz | 975.3 | pF | ||
| Output Capacitance | Coss | 175 | ||||
| Reverse Transfer Capacitance | Crss | 9.4 | ||||
| SWITCHING PARAMETERS | ||||||
| Turn-on delay time | td(on) | (2) VGS=10V, VDS=50V, RG=10, ID=5A | 16.5 | ns | ||
| Turn-on rise time | tr | 3.7 | ||||
| Turn-off delay time | td(off) | 64.7 | ||||
| Turn-off fall time | tf | 44 | ||||
| Source-Drain Diode characteristics | ||||||
| Body diode voltage | VSD | (1) IS=20A,VGS=0V | 1.3 | V | ||
2410121743_JSCJ-CJU50SN10_C5173759.pdf
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