Silicon NPN Power Transistor JSMSEMI TIP3055 90W Dissipation 15A Collector Current TO247 Package Type
Key Attributes
Model Number:
TIP3055
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Pd - Power Dissipation:
6W
Transition Frequency(fT):
2.5MHz
Type:
NPN
Current - Collector(Ic):
15A
Collector - Emitter Voltage VCEO:
60V
Mfr. Part #:
TIP3055
Package:
TO-247
Product Description
Product Overview
The TIP3055 is a silicon NPN power transistor designed for general-purpose switching and amplifier applications. It offers a robust 90W power dissipation at 25C case temperature and a continuous collector current of 15A. This transistor is the complement to the TIP2955 type.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package: TO-247
- Material: Silicon
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit |
| VCEO(SUS) | Collector-emitter sustaining voltage | IC=30mA ;IB=0 | 60 | V |
| VCEsat-1 | Collector-emitter saturation voltage | IC=4A; IB=0.4A | 1.1 | V |
| VCEsat-2 | Collector-emitter saturation voltage | IC=10A ;IB=3.3A | 3.0 | V |
| VBE | Base-emitter on voltage | IC=4A ; VCE=4V | 1.5 | V |
| ICEO | Collector cut-off current | VCE=30V; IB=0 | 0.7 | mA |
| ICER | Collector cut-off current | VCE=70Vdc;RBE=100Ohm | 1.0 | mA |
| ICEV | Collector cut-off current | VCE=100Vdc,VBE(off)=1.5Vdc | 5.0 | mA |
| IEBO | Emitter cut-off current | VEB=7V; IC=0 | 5.0 | mA |
| hFE-1 | DC current gain | IC=4A ; VCE=4V | 20-70 | |
| hFE-2 | DC current gain | IC=10A ; VCE=4V | 5.0 | |
| Is/b | Second breakdown collector current | With base forward biased VCE=30Vdc,t=1.0s, Nonrepetitive | 3.0 | A |
| fT | Transition frequency | IC=0.5A ; VCE=10V | 2.5 | MHz |
| VCBO | Collector-base voltage | Open emitter | 100 | V |
| VCEO | Collector-emitter voltage | Open base | 60 | V |
| VEBO | Emitter-base voltage | Open collector | 7 | V |
| IC | Collector current | 15 | A | |
| IB | Base current | 7 | A | |
| PC | Collector power dissipation | TC=25 | 90 | W |
| Tj | Junction temperature | 150 | ||
| Tstg | Storage temperature | -65~150 | ||
| Rth j-c | Thermal resistance junction to case | 1.39 | /W |
2401051654_JSMSEMI-TIP3055_C2900597.pdf
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