Surface mount integrated N channel MOSFET and PNP transistor JSCJ CJZM718 for charging circuit design
Key Attributes
Model Number:
CJZM718
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
RDS(on):
700mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
16pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
100pF
Gate Charge(Qg):
750nC
Mfr. Part #:
CJZM718
Package:
DFNWB-8L-EP(2x3)
Product Description
Product Overview
The DFNWB3x2-8L-I is a compact surface-mount package containing an N-channel MOSFET and a PNP bipolar transistor. This integrated solution offers high DC current gain, low threshold voltage, and is designed for power management applications in portable equipment, such as charging circuits.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: DFNWB3x2-8L-I
- Marking: M718 (Device code), YY (Code)
Technical Specifications
| Parameter | Symbol | PNP Transistor Conditions | Min | Typ | Max | Unit | N-MOSFET Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -25 | V | ||||||||
| Collector-Emitter Voltage | VCEO | -25 | V | ||||||||
| Emitter-Base Voltage | VEBO | -7.5 | V | ||||||||
| Collector Current | IC | -3 | A | ||||||||
| Drain-Source Voltage | VDS | VGS =0V, ID=250A | 20 | V | |||||||
| Gate-Source Voltage | VGS | 6 | V | ||||||||
| Drain Current - Continuous | ID | 0.5 | A | ||||||||
| Drain Current - Pulse | IDM | 2 | A | ||||||||
| Power Dissipation | PD | Ta=25 unless otherwise noted | 1 | W | |||||||
| Thermal Resistance Junction to Ambient | RJA | note1 | 175 | /W | |||||||
| Thermal Resistance Junction to Ambient | RJA | note2 | 110 | /W | |||||||
| Operation Junction and Storage Temperature Range | TJ,Tstg | MOSFET independently in a package | -55 | +150 | |||||||
| Lead Temperature | TL | 260 | |||||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-0.1mA, IE=0 | -25 | V | |||||||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-10mA, IB=0 | -25 | V | |||||||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-0.1mA, IC=0 | -7.5 | V | |||||||
| Collector cut-off current | ICBO | VCB=-20V, IE=0 | -25 | nA | |||||||
| Emitter cut-off current | IEBO | VEB=-6V, IC=0 | -25 | nA | |||||||
| DC current gain | hFE | VCE=-2V, IC=-0.01A | 300 | ||||||||
| DC current gain | hFE | VCE=-2V, IC=-0.1A | 300 | ||||||||
| DC current gain | hFE | VCE=-2V, IC=-2A | 150 | ||||||||
| DC current gain | hFE | VCE=-2V, IC=-6A | 15 | ||||||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-0.1A, IB=-10mA | -0.300 | V | |||||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-1A, IB=-20mA | -0.220 | V | |||||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-1.5A, IB=-50mA | -0.250 | V | |||||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-2.5A, IB=-150mA | -0.350 | V | |||||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-3A, IB=-300mA | -0.380 | V | |||||||
| Base-emitter saturation voltage | VBE(sat) | IC=-3.5A, IB=-350mA | -1.075 | V | |||||||
| Base-emitter voltage | VBE(on) | VCE=-2V, IC=-3.5A | -0.95 | V | |||||||
| Transition frequency | fT | VCE=-10V, IC=-50mA, f=100MHz | 150 | MHz | |||||||
| Drain-source breakdown voltage | V (BR)DSS | 20 | V | ||||||||
| Zero gate voltage drain current | IDSS | VDS =16V, VGS = 0V | 0.1 | A | |||||||
| Gate-body leakage current | IGSS | VGS =4.5V, VDS = 0V | 1 | A | |||||||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.45 | 1.2 | V | ||||||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =0.6A | 0.7 | ||||||||
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =0.5A | 0.85 | ||||||||
| Forward tranconductance | gfs | VDS =10V, ID =0.4A | 0.5 | S | |||||||
| Diode forward voltage | VSD | IS=0.15A, VGS = 0V | 1.2 | V | |||||||
| Input Capacitance | Ciss | VDS =16V, VGS =0V, f =1MHz | 100 | pF | |||||||
| Output Capacitance | Coss | VDS =16V, VGS =0V, f =1MHz | 16 | pF | |||||||
| Reverse Transfer Capacitance | Crss | VDS =16V, VGS =0V, f =1MHz | 12 | pF | |||||||
| Turn-on delay time | td(on) | VDD=10V, VGEN=4.5V, RG=10, RL=47, ID=0.2A | 5 | ns | |||||||
| Turn-on rise time | tr | VDD=10V, VGEN=4.5V, RG=10, RL=47, ID=0.2A | 5 | ns | |||||||
| Turn-off delay time | td(off) | VDD=10V, VGEN=4.5V, RG=10, RL=47, ID=0.2A | 25 | ns | |||||||
| Turn-off fall time | tf | VDD=10V, VGEN=4.5V, RG=10, RL=47, ID=0.2A | 11 | ns | |||||||
| Total Gate Charge | Qg | VDS =10V, VGS =4.5V, ID =0.25A | 750 | nC | |||||||
| Gate-Source Charge | Qgs | VDS =10V, VGS =4.5V, ID =0.25A | 75 | nC | |||||||
| Gate-Drain Charge | Qg | VDS =10V, VGS =4.5V, ID =0.25A | 225 | nC |
2410121912_JSCJ-CJZM718_C2910049.pdf
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