Power MOSFET JSCJ CJS2016 Featuring Low Gate Charge and High Current Capacity for Electronic Devices
Key Attributes
Model Number:
CJS2016
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@2.5V,5A
Gate Threshold Voltage (Vgs(th)):
450mV
Reverse Transfer Capacitance (Crss@Vds):
125pF
Number:
1 N-channel
Input Capacitance(Ciss):
800pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
11nC
Mfr. Part #:
CJS2016
Package:
TSSOP-8
Product Description
Product Overview
The JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD Dual N-Channel MOSFET (CJS2016) is a high-performance power MOSFET designed for surface mount applications. It features TrenchFET technology, offering excellent RDS(on), low gate charge, and high power and current handling capabilities. This MOSFET is ideal for battery protection, load switching, and power management solutions.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package: TSSOP8
- Material: Plastic-Encapsulated MOSFET
- Marking: CJS2016
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =18V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.45 | 1.2 | V | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =6A | 20 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =5A | 27 | m | ||
| Forward tranconductance | gFS | VDS =5V, ID =4.5A | 10 | S | ||
| Diode forward voltage | VSD | IS=1.25A, VGS = 0V | 1.2 | V | ||
| Input Capacitance | Ciss | VDS =8V,VGS =0V,f =1MHz | 800 | pF | ||
| Output Capacitance | Coss | VDS =8V,VGS =0V,f =1MHz | 155 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =8V,VGS =0V,f =1MHz | 125 | pF | ||
| Turn-on delay time | td(on) | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 18 | ns | ||
| Turn-on rise time | tr | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 5 | ns | ||
| Turn-off delay time | td(off) | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 43 | ns | ||
| Turn-off fall time | tf | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 20 | ns | ||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V,ID=4A | 11 | nC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V,ID=4A | 2.3 | nC | ||
| Gate-Drain Charge | Qg d | VDS =10V,VGS =4.5V,ID=4A | 2.5 | nC |
2411121115_JSCJ-CJS2016_C504158.pdf
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