High Temperature Operating NPN Transistor JSMSEMI S9013 with 150 Celsius Maximum Ambient Temperature
Key Attributes
Model Number:
S9013
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
625mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S9013
Package:
TO-92
Product Description
Product Overview
The JSMICRO S9013 is an NPN Epitaxial Silicon Transistor designed for general-purpose applications. It offers a power dissipation of 0.625 W at 25C ambient temperature and can operate up to 150C. Key features include a collector current of 0.5 A and a collector-base voltage of 40 V.
Product Attributes
- Brand: JSMICRO
- Product Name: S9013
- Type: NPN Epitaxial Silicon Transistor
- Origin: Semiconductor
Technical Specifications
| Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
| Collector-base breakdown voltage | V(BR)CBO | Ic= 100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 1 mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB= 40V, IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCE=20V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 5V, IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=1V, IC=50mA | 64 | 300 | ||
| hFE(2) | VCE=1V, IC= 500mA | 40 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC= 500 mA, IB= 50mA | 0.6 | V | ||
| Base-emitter voltage | VBE(sat) | IC= 500 mA, IB= 50mA | 1.2 | V | ||
| Transition frequency | fT | VCE=6V,IC=20mA, f=30MHz | 150 | MHz |
2401051656_JSMSEMI-S9013_C2931497.pdf
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