Low RDS ON N Channel MOSFET JSMSEMI SI7884BDP T1 GE3 JSM designed for switching and heat management
Key Attributes
Model Number:
SI7884BDP-T1-GE3-JSM
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
220pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.58nF@25V
Pd - Power Dissipation:
83W
Gate Charge(Qg):
50nC
Mfr. Part #:
SI7884BDP-T1-GE3-JSM
Package:
DFN5060-8L
Product Description
Product Overview
This N-Channel MOSFET features advanced trench technology and design, offering excellent RDS(ON) with low gate charge. It is suitable for a wide variety of applications, providing superior performance and efficiency. Key advantages include ultra-low RDS(ON) due to advanced high cell density trench technology, and excellent heat dissipation through its package design.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: SI7884BDP-T1-GE3
- Material: N-Channel MOSFET
- Color: Green device available
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current-TC=25 | 90 | A | |||
| ID | Continuous Drain Current-TC=100 | 57 | A | |||
| ID | Pulsed Drain Current | 360 | A | |||
| EAS | Single Pulse Avalanche Energy | mJ | ||||
| PD | Power Dissipation | 83 | W | |||
| Tj, Ts | Operating and Storage Junction Temperature Range | -55 | +150 | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 2 | /W | |||
| RJA | Thermal Resistance Junction to Ambient | 62 | /W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,ID=250A | 40 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VGS=0V, VDS=40V | 1 | A | ||
| IGSS | Gate-Source Leakage Current | VGS=20V, VDS=0A | 100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | GATE-Source Threshold Voltage | VGS=VDS, ID=250A | 1.2 | 1.6 | 2.5 | V |
| RDS(ON) | Drain-Source On Resistance | VGS=10V,ID=30A | 1.9 | 2.4 | m | |
| RDS(ON) | Drain-Source On Resistance | VGS=4.5V,ID=15 A | 2. | 3.3 | m | |
| GFS | Forward Transconductance | VDS=10V, ID=2A | 16.5 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V, VGS=0V, f=1MHz | 2410 | 3600 | pF | |
| Coss | Output Capacitance | 233 | 400 | pF | ||
| Crss | Reverse Transfer Capacitance | 152 | 230 | pF | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD=15V,ID=1A,RG=3.3 VGS=10V | 14.2 | 28 | ns | |
| tr | Rise Time | 18.3 | 36 | ns | ||
| td(off) | Turn-Off Delay Time | 38.8 | 76 | ns | ||
| tf | Fall Time | 13.9 | 28 | ns | ||
| Qg | Total Gate Charge | VGS=4.5V, VDS=32V, ID=10A | 25 | 50 | nC | |
| Qgs | Gate-Source Charge | 6.4 | 13 | nC | ||
| Qgd | Gate-Drain Miller Charge | 12.1 | 24 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| VSD | Source-Drain Diode Forward Voltage | VGS=0V,IS=1A | 1 | V | ||
| IS | Continuous Source Current | 90 | A | |||
| IS | Pulsed Source Current | 180 | A | |||
2401051657_JSMSEMI-SI7884BDP-T1-GE3-JSM_C7421711.pdf
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