Small Size Silicon Planar Zener Diode JSMSEMI MM1Z6V2BW for Space Constrained Surface Mount Designs
Key Attributes
Model Number:
MM1Z6V2BW
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
50Ω
Diode Configuration:
-
Zener Voltage(Range):
6.08V~6.32V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
6.2V
Mfr. Part #:
MM1Z6V2BW
Package:
SOD-123W
Product Description
Product Overview
The JSMICRO MM1Z2V0BW THRU MM1Z75BW series are silicon planar Zener diodes designed for surface-mounted applications. They offer a wide zener reverse voltage range from 2.0V to 75V and a total power dissipation of up to 500mW. The small plastic SOD-123W package is suitable for space-constrained designs.
Product Attributes
- Brand: JSMICRO
- Origin: Not specified
- Material: Silicon Planar
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Type | Marking | Zener Voltage Range (V) | Test Current (mA) | Dynamic Impedance () | Reverse Current (A) | Forward Voltage (V) | ||
| Min | Nom | Max | (at IZT) | (at IZT) | (at VR) | (at IF = 10 mA) | ||
| MM1Z2V0BW | 4A | 1.96 | 2 | 2.04 | 5 | 100 | 0.5 | 0.9 |
| MM1Z2V2BW | 4B | 2.16 | 2.2 | 2.24 | 5 | 100 | 0.7 | 0.9 |
| MM1Z2V4BW | 4C | 2.35 | 2.4 | 2.45 | 5 | 100 | 1 | 0.9 |
| MM1Z2V7BW | 4D | 2.65 | 2.7 | 2.75 | 5 | 110 | 1 | 0.9 |
| MM1Z3V0BW | 4E | 2.94 | 3 | 3.06 | 5 | 120 | 1 | 0.9 |
| MM1Z3V3BW | 4F | 3.23 | 3.3 | 3.37 | 5 | 130 | 1 | 0.9 |
| MM1Z3V6BW | 4H | 3.53 | 3.6 | 3.67 | 5 | 130 | 1 | 0.9 |
| MM1Z3V9BW | 4J | 3.82 | 3.9 | 3.98 | 5 | 130 | 1 | 0.9 |
| MM1Z4V3BW | 4K | 4.21 | 4.3 | 4.39 | 5 | 130 | 1 | 0.9 |
| MM1Z4V7BW | 4M | 4.61 | 4.7 | 4.79 | 5 | 130 | 1 | 0.9 |
| MM1Z5V1BW | 4N | 5 | 5.1 | 5.20 | 5 | 130 | 1.5 | 0.9 |
| MM1Z5V6BW | 4P | 5.49 | 5.6 | 5.71 | 5 | 80 | 2.5 | 0.9 |
| MM1Z6V2BW | 4R | 6.08 | 6.2 | 6.32 | 5 | 50 | 3 | 0.9 |
| MM1Z6V8BW | 4X | 6.66 | 6.8 | 6.94 | 5 | 30 | 3.5 | 0.9 |
| MM1Z7V5BW | 4Y | 7.35 | 7.5 | 7.65 | 5 | 30 | 4 | 0.9 |
| MM1Z8V2BW | 4Z | 8.04 | 8.2 | 8.36 | 5 | 30 | 5 | 0.9 |
| MM1Z9V1BW | 5A | 8.92 | 9.1 | 9.28 | 5 | 30 | 6 | 0.9 |
| MM1Z10BW | 5B | 9.8 | 10 | 10.2 | 5 | 30 | 7 | 0.9 |
| MM1Z11BW | 5C | 10.78 | 11 | 11.22 | 5 | 30 | 8 | 0.9 |
| MM1Z12BW | 5D | 11.76 | 12 | 12.24 | 5 | 35 | 9 | 0.9 |
| MM1Z13BW | 5E | 12.74 | 13 | 13.26 | 5 | 35 | 10 | 0.9 |
| MM1Z15BW | 5F | 14.7 | 15 | 15.3 | 5 | 40 | 11 | 0.9 |
| MM1Z16BW | 5H | 15.68 | 16 | 16.32 | 5 | 40 | 12 | 0.9 |
| MM1Z18BW | 5J | 17.64 | 18 | 18.36 | 5 | 45 | 13 | 0.9 |
| MM1Z20BW | 5K | 19.6 | 20 | 20.4 | 5 | 50 | 15 | 0.9 |
| MM1Z22BW | 5M | 21.56 | 22 | 22.44 | 5 | 55 | 17 | 0.9 |
| MM1Z24BW | 5N | 23.52 | 24 | 24.48 | 5 | 60 | 19 | 0.9 |
| MM1Z27BW | 5P | 26.46 | 27 | 27.54 | 5 | 70 | 21 | 0.9 |
| MM1Z30BW | 5R | 29.4 | 30 | 30.6 | 5 | 80 | 23 | 0.9 |
| MM1Z33BW | 5X | 32.34 | 33 | 33.66 | 5 | 80 | 25 | 0.9 |
| MM1Z36BW | 5Y | 35.28 | 36 | 36.72 | 5 | 90 | 27 | 0.9 |
| MM1Z39BW | 5Z | 38.22 | 39 | 39.78 | 2.5 | 100 | 30 | 0.9 |
| MM1Z43BW | 6A | 42.14 | 43 | 43.86 | 2.5 | 130 | 33 | 0.9 |
| MM1Z47BW | 6B | 46.06 | 47 | 47.94 | 2.5 | 150 | 36 | 0.9 |
| MM1Z51BW | 6C | 49.98 | 51 | 52.02 | 2.5 | 180 | 39 | 0.9 |
| MM1Z56BW | 6D | 54.88 | 56 | 57.12 | 2.5 | 180 | 43 | 0.9 |
| MM1Z62BW | 6E | 60.76 | 62 | 63.24 | 2.5 | 200 | 47 | 0.9 |
| MM1Z68BW | 6F | 66.64 | 68 | 69.36 | 2.5 | 250 | 52 | 0.9 |
| MM1Z75BW | 6H | 73.5 | 75 | 76.5 | 2.5 | 300 | 57 | 0.9 |
(1) VZT is tested with pulses (20 ms)
2409302232_JSMSEMI-MM1Z6V2BW_C2856894.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
