Plastic Encapsulate MOSFET Device JSMSEMI JSM7409B Offering Low Gate Charge and RDS ON Characteristics
Key Attributes
Model Number:
JSM7409B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
300pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.6nF@15V
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
30nC@15V
Mfr. Part #:
JSM7409B
Package:
PDFN3X3-8L
Product Description
Product Description
The JSM7409B is a Plastic-Encapsulate MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This high-power and current-handling device is suitable for applications such as battery switches, load switches, and power management.
Product Attributes
- Brand: JSMCRO Semiconductor
- Product Name: JSM7409B
- Material: Plastic-Encapsulate
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| General Features | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Continuous Drain Current | ID | TA=25 | -25 | A | ||
| RDS(ON) | VGS=-4.5V | 30 | m | |||
| RDS(ON) | VGS=-10V | 17 | m | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TA=25 | -30 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TA=25 | -10 | A | ||
| Continuous Drain Current | ID | TJ=150, TA=70 | -8.0 | A | ||
| Drain Current-Pulsed | IDM | Note 1 | -45 | A | ||
| Maximum Power Dissipation | PD | 3.1 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | Note 2 | 40 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -30 | -33 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | 1.0 | 1.2 | 1.7 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-25A | 25 | m | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-10A | 30 | m | ||
| Forward Transconductance | gFS | VDS=-15V, ID=-10A | 14 | S | ||
| Input Capacitance | Clss | 1600 | pF | |||
| Output Capacitance | Coss | 350 | pF | |||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, F=1.0MHz | 300 | pF | ||
| Turn-on Delay Time | td(on) | 10 | nS | |||
| Turn-on Rise Time | tr | 15 | nS | |||
| Turn-Off Delay Time | td(off) | 110 | nS | |||
| Turn-Off Fall Time | tf | VDD=-15V, ID=-1A, VGS=-10V,RGEN=6 | 70 | nS | ||
| Total Gate Charge | Qg | 30 | nC | |||
| Gate-Source Charge | Qgs | 5.5 | nC | |||
| Gate-Drain Charge | Qg | VDS=-15V,ID=-10A, VGS=-10V | 8 | nC | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=-10A | 1.0 | 1.2 | V | |
2108150330_JSMSEMI-JSM7409B_C2874718.pdf
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