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quality Electronic Switching Transistor JUXING MMBT4401 2X NPN SOT23 Package for General Applications factory
quality Electronic Switching Transistor JUXING MMBT4401 2X NPN SOT23 Package for General Applications factory

Electronic Switching Transistor JUXING MMBT4401 2X NPN SOT23 Package for General Applications

Key Attributes
Model Number: MMBT4401 2X
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT4401 2X
Package:
SOT-23
Product Description

MMBT4401 TRANSISTOR (NPN)

The MMBT4401 is an NPN switching transistor designed for general-purpose applications. Its robust construction and reliable performance make it suitable for various electronic circuits requiring efficient switching capabilities.

Product Attributes

  • Brand: MMBT4401 (Implied from product name)
  • Type: NPN Transistor
  • Package: SOT-23
  • Origin: http://www.trr-jx.com (Implied from URL)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 600 mA
Collector Power Dissipation PC (Ta=25) 300 mW
Thermal Resistance Junction To Ambient RJA 417 /W
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=100A ,IC=0 6 V
Collector cut-off current ICBO VCB=50V,IE=0 0.1 A
Collector cut-off current ICEX VCE=35V, VEB=0.4V 0.1 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A
DC current gain hFE1 VCE=1V, IC=0.1mA 20
DC current gain hFE2 VCE=1V, IC=1mA 40
DC current gain hFE3 VCE=1V, IC=10mA 80
DC current gain hFE4 VCE=1V, IC=150mA 100 300
DC current gain hFE5 VCE=2V, IC=500mA 40
Collector-emitter saturation voltage VCE(sat) IC=150mA,IB=15mA 0.4 V
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.75 V
Base-emitter saturation voltage VBE(sat IC=150mA,IB=15mA 0.95 V
Base-emitter saturation voltage VBE(sat IC=500mA,IB=50mA 1.2 V
Transition frequency fT VCE=10V, IC=20mA,f =100MHz 250 MHz
Delay time td VCC=30V, VBE(off)=-2V IC=150mA , IB1=15mA 15 ns
Rise time tr 20 ns
Storage time ts VCC=30V, IC=150mA IB1=IB2=15mA 225 ns
Fall time tf 60 ns

2410121503_JUXING-MMBT4401-2X_C5365435.pdf

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