KEC KDS120E-RTK P diode silicon epitaxial type featuring ultra high speed switching and low total capacitance
Product Overview
The KDS120E is a silicon epitaxial type diode designed for ultra-high-speed switching applications. It features a small ESM package, low forward voltage (0.92V typ.), fast reverse recovery time (1.6ns typ.), and small total capacitance (2.2pF typ.). This diode is suitable for applications requiring rapid switching performance.
Product Attributes
- Type: Silicon Epitaxial Diode
- Application: Ultra High Speed Switching
- Package: ESM
Technical Specifications
| Characteristic | Symbol | Rating | Unit |
|---|---|---|---|
| Maximum (Peak) Reverse Voltage | VRM | 85 | V |
| Reverse Voltage | VR | 80 | V |
| Maximum (Peak) Forward Current | IFM | 300 * | mA |
| Average Forward Current | IO | 100 * | mA |
| Surge Current (10ms) | IFSM | 2 * | A |
| Power Dissipation | PD | 100 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55150 |
| Characteristic | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Forward Voltage | VF(1) | IF=1mA | - | 0.61 | - | V |
| Forward Voltage | VF(2) | IF=10mA | - | 0.74 | - | V |
| Forward Voltage | VF(3) | IF=100mA | - | 0.92 | 1.20 | V |
| Reverse Current | IR | VR=80V | - | - | 0.5 | A |
| Total Capacitance | CT | VR=0, f=1MHz | - | 2.2 | 4.0 | pF |
| Reverse Recovery Time | trr | IF=10mA | - | 1.6 | 4.0 | nS |
| Dimension | Symbol | Value | Unit |
|---|---|---|---|
| Dimension A | A | 1.60 | MM |
| Dimension B | B | 0.20 | MM |
| Dimension C | C | 0.70 | MM |
| Dimension D | D | 1.60 | MM |
| Dimension E | E | 0.39 | MM |
| Dimension F | F | 0.27 | MM |
| Dimension G | G | 1.00 | MM |
| Dimension H | H | 0.50 | MM |
| Dimension J | J | 0.05 | MM |
Note: * Unit Rating. Total Rating = Unit Rating x 1.5
2411200013_KEC-KDS120E-RTK-P_C112692.pdf
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