KEC KDS120E-RTK P diode silicon epitaxial type featuring ultra high speed switching and low total capacitance

Key Attributes
Model Number: KDS120E-RTK/P
Product Custom Attributes
Reverse Leakage Current (Ir):
500nA@80V
Reverse Recovery Time (trr):
1.6ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
80V
Diode Configuration:
1 Pair Common Anode
Voltage - Forward(Vf@If):
1.25V@100mA
Current - Rectified:
100mA
Mfr. Part #:
KDS120E-RTK/P
Package:
SOT-523-3
Product Description

Product Overview

The KDS120E is a silicon epitaxial type diode designed for ultra-high-speed switching applications. It features a small ESM package, low forward voltage (0.92V typ.), fast reverse recovery time (1.6ns typ.), and small total capacitance (2.2pF typ.). This diode is suitable for applications requiring rapid switching performance.

Product Attributes

  • Type: Silicon Epitaxial Diode
  • Application: Ultra High Speed Switching
  • Package: ESM

Technical Specifications

Characteristic Symbol Rating Unit
Maximum (Peak) Reverse Voltage VRM 85 V
Reverse Voltage VR 80 V
Maximum (Peak) Forward Current IFM 300 * mA
Average Forward Current IO 100 * mA
Surge Current (10ms) IFSM 2 * A
Power Dissipation PD 100 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward Voltage VF(1) IF=1mA - 0.61 - V
Forward Voltage VF(2) IF=10mA - 0.74 - V
Forward Voltage VF(3) IF=100mA - 0.92 1.20 V
Reverse Current IR VR=80V - - 0.5 A
Total Capacitance CT VR=0, f=1MHz - 2.2 4.0 pF
Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS
Dimension Symbol Value Unit
Dimension A A 1.60 MM
Dimension B B 0.20 MM
Dimension C C 0.70 MM
Dimension D D 1.60 MM
Dimension E E 0.39 MM
Dimension F F 0.27 MM
Dimension G G 1.00 MM
Dimension H H 0.50 MM
Dimension J J 0.05 MM

Note: * Unit Rating. Total Rating = Unit Rating x 1.5


2411200013_KEC-KDS120E-RTK-P_C112692.pdf

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