KEXIN FDC86244 HF N Channel MOSFET Featuring 2.3A Continuous Drain Current and Fast Switching Speed
Key Attributes
Model Number:
FDC86244-HF
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
144mΩ@10V,2.3A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
5pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
345pF
Pd - Power Dissipation:
1.6W
Gate Charge(Qg):
6nC@10V
Mfr. Part #:
FDC86244-HF
Package:
SOT-23-6
Product Description
N-Channel MOSFET - FDC86244 (KDC86244)
The FDC86244 (KDC86244) is a high-performance N-Channel MOSFET designed for various switching applications. It features a high drain-source voltage rating of 150V and a continuous drain current of 2.3A. With fast switching speeds and low on-resistance (RDS(ON)), this MOSFET offers efficient power management. It is suitable for applications requiring reliable and fast switching characteristics.
Product Attributes
- Brand: www.kexin.com.cn
- SMD Type: SOT-23-6
- Marking: 86244
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | (VGS = 10V) | 2.3 | A | ||
| Pulsed Drain Current | IDM | (Note.1) | 10 | A | ||
| Power Dissipation | PD | (Note.1) | 1.6 | W | ||
| Power Dissipation | PD | (Note.2) | 0.8 | W | ||
| Single Pulse Avalanche Energy | EAS | (Note.3) | 12 | mJ | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDSS | ID=250µA, VGS=0V | 150 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=120V, VGS=0V | 1 | µA | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250µA | 2 | 4 | V | |
| RDS(On) Static Drain-Source On-Resistance | VGS=10V, ID=2.3A | 144 | mΩ | |||
| RDS(On) Static Drain-Source On-Resistance | VGS=6V, ID=1.9A | 188 | mΩ | |||
| Forward Transconductance | gFS | VDS=5V, ID=2.3A | 6 | S | ||
| Input Capacitance | Ciss | VGS=0V, VDS=75V, f=1MHz | 260 | 345 | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=75V, f=1MHz | 32 | 45 | pF | |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=75V, f=1MHz | 1.7 | 5 | pF | |
| Gate Resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 1.3 | Ω | ||
| Total Gate Charge | Qg | VDD = 75 V, ID = 2.3 A, VGS = 10 V, RGEN = 6 Ω | 4.2 | 6 | nC | |
| Gate Source Charge | Qgs | VGS=0 to 10V, VDS=75V, ID=2.3A | 2.4 | nC | ||
| Gate Drain Charge | Qg d | VGS=0 to 5V, VDS=75V, ID=2.3A | 1 | nC | ||
| Turn-On DelayTime | td(on) | 4.7 | 10 | ns | ||
| Turn-On Rise Time | tr | 1.4 | 10 | ns | ||
| Turn-Off DelayTime | td(off) | 10 | 20 | ns | ||
| Turn-Off Fall Time | tf | 3.1 | 10 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF= 2.3A, dI/dt= 100A/µs | 45 | 73 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF= 2.3A, dI/dt= 100A/µs | 33 | 53 | nC | |
| Maximum Body-Diode Continuous Current | IS | 2.3 | A | |||
| Diode Forward Voltage | VSD | IS=2.3A,VGS=0V | 1.3 | V | ||
| Thermal Resistance | ||||||
| Junction-to-Ambient | RthJA | mounted on a 1 in² pad of 2 oz copper | 78 | °C/W | ||
| Junction-to-Ambient | RthJA | mounted on a minimum pad of 2 oz copper | 175 | °C/W | ||
| Junction-to-Case | RthJC | 30 | °C/W | |||
2411220026_KEXIN-FDC86244-HF_C489384.pdf
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