80A 40V N CHANNEL MOSFET KIA Semicon Tech KND3404B for Motor Control Battery and UPS Power Solutions
Key Attributes
Model Number:
KND3404B
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@4.5V,30A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
150pF
Number:
-
Output Capacitance(Coss):
290pF
Input Capacitance(Ciss):
2.3nF
Pd - Power Dissipation:
92W
Gate Charge(Qg):
47.5nC@10V
Mfr. Part #:
KND3404B
Package:
TO-252
Product Description
Product Overview
The KIA SEMICONDUCTORS KNX3404B is an 80A, 40V N-CHANNEL MOSFET featuring CRM(CQ) advanced Trench MOS technology. It offers extremely low on-resistance (RDS(ON),typ.=5.0m@VGS=10V) and an excellent QgxRDS(on) product (FOM). This MOSFET is qualified according to JEDEC criteria and is suitable for applications such as motor control and drive, battery management, and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KNX3404B
- Package: TO-252
- Certifications: Qualified according to JEDEC criteria
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSS | 40 | V | |||
| Continuous Drain Current | ID | TC=25 C | 80 | A | ||
| Continuous Drain Current | ID | TC=100 C | 58 | A | ||
| Pulsed drain current | IDP | (TC = 25C, tp limited by Tjmax) | 320 | A | ||
| Avalanche energy, single pulse | EAS | 225 | mJ | |||
| Gate-Source voltage | VGS | 20 | V | |||
| Power dissipation | Ptot | (TC = 25 C) | 92 | W | ||
| Junction & Storage Temperature Range | TJ& TSTG | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| Thermal resistance, junction-ambient | RJA | 94 | C/W | |||
| Thermal resistance, Junction-case | RJC | 1.37 | C/W | |||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 40 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=40V , VGS=0V ,Tj=25 C | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=40V , VGS=0V, Tj=125C | - | - | 10 | A |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 1.0 | 1.8 | 2.5 | V |
| Gate leakage current | IGSS | VGS=20V,VDS=0V | - | 1 | 100 | nA |
| Drain-source on-resistance | RDS(on) | VGS=10V,ID=30A | - | 5.0 | 6.5 | m |
| Drain-source on-resistance | RDS(on) | VGS=4.5V, ID=30A | - | 5.5 | 8.0 | m |
| Forward Transconductance | gfs | VDS=5V,ID=40A | - | 110 | - | S |
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V Frequency=1MHz | - | 2.0 | - | |
| Input capacitance | Ciss | VDS=25V,VGS=0V, F=1MHz | - | 2300 | - | pF |
| Output capacitance | Coss | - | 290 | - | pF | |
| Reverse transfer capacitance | Crss | - | 150 | - | pF | |
| Turn-on delay time | td(on) | VDD=20V,ID=40A, VGS=10V,RG=3 | - | 9.5 | - | ns |
| Rise time | tr | - | 30 | - | ns | |
| Turn-off delay time | td(off) | - | 55 | - | ns | |
| Fall time | tf | - | 17.5 | - | ns | |
| Gate Charge Characteristics | ||||||
| Total gate charge | Qg | VDS=20V,ID=40A, VGS=10V, F=1MHz | - | 47.5 | - | nC |
| Gate-source charge | Qgs | - | 9.0 | - | nC | |
| Gate-drain charge | Qgd | - | 10.0 | - | nC | |
| Diode Characteristics | ||||||
| Diode forward voltage | VSD | VGS=0V,ISD=40A | - | - | 1.5 | V |
| Reverse recovery time | trr | IF=40A DlF/dt=100A/s | - | 20 | - | ns |
| Reverse recovery charge | Qrr | - | 9.0 | - | nC | |
2409302232_KIA-Semicon-Tech-KND3404B_C1509094.pdf
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