Power Supply N Channel Mosfet Featuring KIA Semicon Tech KIA840SD With 8A 500V Drain Source Voltage
Key Attributes
Model Number:
KIA840SD
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
900mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
-
Pd - Power Dissipation:
-
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
KIA840SD
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The KIA SEMICONDUCTORS 840S is an 8A, 500V N-CHANNEL MOSFET designed for various power supply applications. It features low on-resistance, low gate charge, and a peak current vs. pulse width curve. This RoHS compliant component is suitable for adaptors, TV main power, SMPS power supplies, and LCD panel power.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: 840S
- Channel Type: N-CHANNEL
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | TO-220 | TO-252, TO-263 | Units | Test Condition |
| Drain-source voltage | VDSS | 500 | 500 | V | |
| Continuous drain current | ID | 8.0 | A | TC=25C | |
| Continuous drain current | ID | 5.5 | A | TC=100C | |
| Pulsed drain current | IDMa1 | 28 | A | ||
| Power dissipation | PD | 160 | 100 | W | |
| Derating factor above 25 | 1.28 | 0.8 | W/C | ||
| Gate-source voltage | VGS | +20 | +20 | V | |
| Single pulse avalanche energy | EASa2 | 400 | mJ | ||
| Avalanche energy, repetitive | EARa1 | 30 | mJ | ||
| Avalanche current | IAR a1 | 7.0 | A | ||
| Peak diode recovery dv/dt | dv/dt a3 | 5.5 | V/ns | ||
| Gate-source ESD(HBM-C=100pF,R=1.5K) | VESD(G-S) | 4000 | V | ||
| Operating junction and storage temperature range | TJ ,TSTG | -55 to150 | -55 to150 | C | |
| Maximum temperature for soldering | TL | 300 | 300 | C | |
| Junction-case thermal resistance | RJC | 1.04 | C/W | Drain lead soldered to water cooled heatsink,PD adjusted for a peak junction temperature of +150 C | |
| Junction-ambient thermal resistance | RJA | 100 | C/W | 1 cubic foot chamber,free air | |
| Drain-source breakdown voltage | BVDSS | 500 | V | VGS=0V,ID=250A | |
| Bvdss temperature coefficient | BVDSS/TJ | 0.74 | V/C | Reference 25,ID=250uA | |
| Drain-source leakage current | IDSS | 25 | A | VDS=500V, VGS=0V, TA=25C | |
| Drain-source leakage current | IDSS | 250 | A | VDS=400V, VGS=0V, TA=125C | |
| Gate source breakdown voltage | VGSO | +20 | V | IGS=+1mA (open drain) | |
| Gate-source forward leakage | IGSS(F) | 10 | uA | VGS=20V | |
| Gate-source reverse leakage | IGSS(R) | -10 | VGS=-20V | ||
| Drain-source on-resistance | RDS(on) | 0.7 | VGS=10V,ID=4A | ||
| Gate threshold voltage | VGS(TH) | 2 | V | VDS= VGS, ID=250uA, Pulse width tp<380s, <2% | |
| Forward transconductance | gfs | 8.5 | S | VDS=15V, ID=3A | |
| Input capacitance | Ciss | 960 | pF | VDS=25V,VGS=0V, f=1MHz | |
| Output capacitance | Coss | 110 | pF | ||
| Reverse transfer capacitance | Crss | 10 | |||
| Turn-on delay time | td(on) | 11 | ns | VDD=250V, ID=8A, RG=12,VGS=10V | |
| Rise time | tr | 17 | |||
| Turn-off delay time | td(off) | 46 | |||
| Fall time | tf | 22 | |||
| Total gate charge | Qg | 24 | nC | VDD=250V, ID=8A, VGS=10V | |
| Gate-source charge | Qgs | 4.0 | |||
| Gate-drain charge | Qgd | 10 | |||
| Continuous source currentbody biode | IS | 8 | A | ||
| Maximum pulsed currentbody biode | ISM | 32 | |||
| Diode forward voltage | VSD | 1.5 | V | IS=8A, VGS=0V | |
| Reverse recovery time | trr | 175 | ns | IS=8A, VGS=0V, dIF/dt=100A/s, TJ=25C | |
| Reverse recovery charge | Qrr | 0.75 | nC | ||
| Reverse recovery current | IRRM | 8.57 | A | Pulse width tp<380s, <2% |
2409302333_KIA-Semicon-Tech-KIA840SD_C134928.pdf
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