N channel MOSFET KIA Semicon Tech KCT1810A 100V 240A suitable for motor control and DC DC converters
Key Attributes
Model Number:
KCT1810A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
260A
RDS(on):
1.6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.648nF
Number:
1 N-channel
Input Capacitance(Ciss):
15.016nF
Pd - Power Dissipation:
313W
Output Capacitance(Coss):
1.472nF
Gate Charge(Qg):
165nC@10V
Mfr. Part #:
KCT1810A
Package:
TOLL-8
Product Description
KIA SEMICONDUCTORS KCT1810A - 240A, 100V N-CHANNEL MOSFET
The KIA SEMICONDUCTORS KCT1810A is an N-CHANNEL MOSFET designed with advanced SGT technology, offering extremely low RDS(on) and excellent gate charge x RDS(on) product (FOM). It is suitable for demanding applications such as motor control and drives, battery management, DC/DC converters, and general-purpose applications.
Product Attributes
- Brand: KIA
- Part Number: KCT1810A
- Package: TOLL-8
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250uA | 100 | V |
| Gate Threshold Voltage | VGS(th ) | VDS=VGS,ID=250uA,Tj=25C | 2 - 4 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V,Tj=25C | - 1 | A |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | - 100 | nA |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=50A,Tj=25C | - 1.6 2.2 | m |
| Transconductance | gfs | VDS=5V,ID=50A | - 190 - | S |
| Input Capacitance | Ciss | VGS=0V, VDS=40V, f=1MHz | - 15016 - | pF |
| Output Capacitance | Coss | - 1472 - | pF | |
| Reverse Transfer Capacitance | Crss | - 1648 - | pF | |
| Gate Total Charge | QG | VGS=10V, VDS=50V, ID=50A | - 165 - | nC |
| Gate-Source Charge | Qgs | - 67 - | ||
| Gate-Drain Charge | Qg | - 35 - | ||
| Turn-on Delay Time | td(on) | Tj=25C, VGS=10V, VDS=50V, RL=3 | - 37 - | ns |
| Rise Time | tr | - 112 - | ||
| Turn-off Delay Time | td(off) | - 85 - | ||
| Fall Time | tf | - 115 - | ||
| Gate Resistance | RG | VGS=0V, VDS=0V,f=1MHz | - 1.6 - | |
| Body Diode Forward Voltage | VSD | VGS=0V, ISD=50A | - 0.85 1.2 | V |
| Body Diode Reverse Recovery Time | trr | IF=30A, dI/dt=500A/s | - 100 - | ns |
| Body Diode Reverse Recovery Charge | Qrr | IF=30A, dI/dt=100A/s | - 323 - | nC |
| Continuous Drain Current | ID | TC=25C(Package limited) | 240 | A |
| Continuous Drain Current | ID | TC=100C(Silicon limited) | 180 | A |
| Pulsed Drain Current | IDP | TC=25C, tp limited by Tjmax | 960 | A |
| Avalanche Energy, Single Pulse | EAS | L=0.5mH, Rg=25 | 1936 | mJ |
| Gate-Source Voltage | VGS | 20 | V | |
| Power Dissipation | Ptot | 313 | W | |
| Junction & Storage Temperature Range | TJ& TSTG | -55 to 150 | C | |
| Thermal Resistance, Junction-Case | RJC | 0.4 | C/W | |
| Thermal Resistance, Junction-Ambient | RJA | 46 | C/W |
2508261745_KIA-Semicon-Tech-KCT1810A_C7465113.pdf
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