Power MOSFET KIA Semicon Tech KNP2708A 160A 80V with Fast Recovery Body Diode and Low Switching Loss
Key Attributes
Model Number:
KNP2708A
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.8mΩ@10V,24A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
260pF
Number:
1 N-channel
Output Capacitance(Coss):
650pF
Input Capacitance(Ciss):
9.3nF
Pd - Power Dissipation:
313W
Gate Charge(Qg):
115nC@10V
Mfr. Part #:
KNP2708A
Package:
TO-220
Product Description
Product Overview
The KNX2708A is a 160A, 80V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. Featuring proprietary new trench technology, it offers a low RDS(ON) of 4.0m (typ.) at VGS=10V, minimized switching loss due to low gate charge, and a fast recovery body diode. This MOSFET is ideal for high-efficiency DC/DC converters, synchronous rectification, and UPS inverters.
Product Attributes
- Brand: KIA
- Part Number: KNX2708A
- Package: TO-220 (KNP2708A), TO-263 (KNB2708A)
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF Characteristics | BVDSS | VGS=0V, ID=250uA | 80 | -- | -- | V |
| IDSS | VDS=80V, VGS=0V | -- | -- | 5 | uA | |
| IDSS | VDS=64V,VGS=0V, TJ =125C | -- | -- | 100 | uA | |
| IGSS | VGS=+20V,VDS=0V | -- | -- | +100 | nA | |
| IGSS | VGS=-20V, VDS=0V | -- | -- | -100 | nA | |
| ON Characteristics | RDS(ON) | VGS=10V, ID=24A[5] | -- | 4.0 | 4.8 | m |
| VGS(TH) | VDS=VGS,ID=250uA | 2.0 | -- | 4.0 | V | |
| gfs | VDS=10V, ID=80A[5] | - | 130 | - | S | |
| Dynamic Characteristics | Ciss | VGS=0V, VDS=25V, f=1.0MHZ | -- | 9300 | -- | pF |
| Coss | -- | 650 | -- | pF | ||
| Crss | -- | 260 | -- | pF | ||
| Rg | f=1.0MHZ | -- | 2.7 | -- | ||
| Gate Charge | Qg | VDD=40V, ID=80A, VGS=0 to 10V | -- | 115 | -- | nC |
| Qgs | -- | 40 | -- | -- | ||
| Qgd | -- | 30 | -- | -- | ||
| EAS | Single Pulse Avalanche Energy | -- | 1100 | -- | mJ | |
| Resistive Switching | td(ON) | VDD=40V, ID=40A, VGS= 10V RG=10 | -- | 50 | -- | nS |
| trise | -- | 135 | -- | -- | ||
| td(OFF) | -- | 112 | -- | -- | ||
| tfall | -- | 75 | -- | -- | ||
| Source-Drain Body Diode | ISD | Continuous Source Current[2] | -- | -- | 160 | A |
| ISM | Pulsed Source Current[2] | -- | -- | 640 | -- | |
| VSD | Diode Forward Voltage IS=80A, VGS=0V | -- | -- | 1.2 | V | |
| trr | Reverse recovery time VGS=0V ,IF=80A, diF/dt=100A/s | -- | 85 | -- | ns | |
| Qrr | Reverse recovery charge | -- | 205 | -- | nC | |
| Absolute Maximum Ratings | VDSS | Drain-to-Source Voltage[1] | -- | -- | 80 | V |
| VGSS | Gate-to-Source Voltage | -- | 20 | -- | V | |
| ID | Continuous Drain Current[2] | -- | 160 | -- | A | |
| ID | Continuous Drain Current [3] | -- | 80 | -- | A | |
| ID | Continuous Drain Current@TC=100 C [2] | -- | 116 | -- | A | |
| IDM | Pulsed Drain Current at VGS=10V[2,4] | -- | 640 | -- | A | |
| dv /dt | Peak Diode Recovery dv/dt[3] | -- | 5.0 | -- | V/ns | |
| PD | Power Dissipation | -- | 313 | -- | W | |
| Thermal Characteristics | RJC | Thermal Resistance, Junction-to-Case | -- | 0.48 | -- | C /W |
| RJA | Thermal Resistance, Junction-to-Ambient | -- | 62 | -- | C /W |
2410010000_KIA-Semicon-Tech-KNP2708A_C1509102.pdf
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