100A 30V N CHANNEL MOSFET KIA Semicon Tech KND3203B with Low On Resistance and JEDEC Certification
Key Attributes
Model Number:
KND3203B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
305pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
2.34nF@30V
Pd - Power Dissipation:
101W
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
KND3203B
Package:
TO-252
Product Description
Product Overview
The KNX3203B is a 100A, 30V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It utilizes CRM(CQ) advanced Trench MOS technology, offering extremely low on-resistance (RDS(on)) and an excellent QgxRDS(on) product (FOM). This MOSFET is qualified according to JEDEC criteria and is suitable for applications such as motor control and drive, battery management, and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KNX3203B
- Package: TO-252
- Certifications: Qualified according to JEDEC criteria
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-source breakdown voltage | BVDSS | VGS=0V,IDS=250A | 30 | - | - | V |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 1.3 | 1.8 | 2.3 | V |
| Zero gate voltage drain current | IDSS | VDS=30V, VGS=0V, TJ=25C | - | - | 1 | A |
| Zero gate voltage drain current | IDSS | VDS=24V, VGS=0V, TJ=125C | - | - | 10 | A |
| Gate-source leakage current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Drain-source on-resistance | RDS(on) | VGS=10V,ID=24A,TJ=25C | - | 3.1 | 4.0 | m |
| Drain-source on-resistance | RDS(on) | VGS=4.5V,ID=20A | - | 4.7 | 7.0 | m |
| Forward transconductance | gfs | VDS=5V,ID=30A | - | 73 | - | S |
| Input capacitance | Ciss | VDS=30V,VGS=0V, f=1MHz | - | 2340 | - | pF |
| Output capacitance | Coss | VDS=30V,VGS=0V, f=1MHz | - | 460 | - | pF |
| Reverse transfer capacitance | Crss | VDS=30V,VGS=0V, f=1MHz | - | 305 | - | pF |
| Turn-on delay time | td(on) | VDD=15V, ID=30A, RG_ext=3,VGS=10V | - | 11 | - | nS |
| Rise time | tr | VDD=15V, ID=30A, RG_ext=3,VGS=10V | - | 102 | - | nS |
| Turn-off delay time | td(off) | VDD=15V, ID=30A, RG_ext=3,VGS=10V | - | 34 | - | nS |
| Fall time | tf | VDD=15V, ID=30A, RG_ext=3,VGS=10V | - | 95 | - | nS |
| Total gate charge | Qg | VDS=15V, VGS=10V ID=30A | - | 50 | - | nC |
| Gate-source charge | Qgs | VDS=15V, VGS=10V ID=30A | - | 9.5 | - | nC |
| Gate-drain charge | Qg d | VDS=15V, VGS=10V ID=30A | - | 13.2 | - | nC |
| Gate resistance | Rg | VDS=0V, VGS=0V,f=1MHz | - | 1.4 | - | |
| Body Diode forward voltage | VSD | VGS=0V,ISD=200A | - | - | 1.3 | V |
| Body Diode Reverse Recovery Time | trr | IF=30A, di/dt=100A/s | - | 21 | - | nS |
| Body Diode Reverse Recovery charge | Qrr | IF=30A, di/dt=100A/s | - | 12 | - | nC |
| Drain-source voltage | VDS | - | - | - | 30 | V |
| Continuous drain current | ID | TC=25C(Silicon limit) | - | - | 100 | A |
| Continuous drain current | ID | TC=25C(Package limit) | - | - | 80 | A |
| Continuous drain current | ID | TC=100C(Silicon limit) | - | - | 72 | A |
| Pulse drain current | IDP | (TC = 25C, tp limited by Tjmax) | - | - | 320 | A |
| Avalanche energy, single pulse | EAS | (L=0.5mH) | - | - | 90 | mJ |
| Gate-Source voltage | VGS | - | -20 | - | +20 | V |
| Power dissipation | P tot | (TC = 25C) | - | - | 101 | W |
| Operating junction and storage temperature | TJ,TSTG | - | -55 | - | 150 | C |
| Thermal resistance, Junction-ambient | RJA | - | - | - | 105 | C/W |
| Thermal resistance, Junction-case | RJC | - | - | - | 1.24 | C/W |
2410010001_KIA-Semicon-Tech-KND3203B_C382145.pdf
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