TrenchFET Technology N Channel MOSFET JUXING SI2302 Suitable for Portable Device and Power Management
Key Attributes
Model Number:
SI2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.2A
Operating Temperature -:
-50℃~+150℃
RDS(on):
80mΩ@4.5V,3.6A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
80pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
300pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
40nC@10V,3.6A
Mfr. Part #:
SI2302
Package:
SOT-23
Product Description
Product Overview
This N-CHANNEL ENHANCEMENT MOSFET features TrenchFET technology, making it suitable for load switching in portable devices and DC/DC converters. Its SOT-23 package is designed for ease of mounting and compatibility with standard PCB layouts.
Product Attributes
- Package: SOT-23
- Flammability Rating: Epoxy UL: 94V-0
- Mounting Position: Any
- Brand: JX (implied by JX2302)
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameters | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | 3.2 | A | |||
| Continuous Source-Drain Diode Current | IS | 0.6 | A | |||
| Maximum Power Dissipation (note1) | PD | 1250 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -50 | +150 | |||
| Thermal Resistance From Junction to Ambient | RθJA | 100 | /W | |||
| Electrical Characteristics (TA = 25 unless otherwise specified) | ||||||
| Static Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=10uA | 20 | V | ||
| Gate-Threshold voltage* | VGS(th) | VDS=VGS, ID=50uA | 0.60 | 0.95 | 1.2 | V |
| Gate-body Leakage | IGSS | VDS=0V, VGS=±8V | ±100 | nA | ||
| Zero Gate Voltage Drain current | IDSS | VDS=20V, VGS=0V | 1.5 | uA | ||
| Drain-Source On-Resistance (a) | RDS(ON) | VGS=4.5V, ID=3.6A | 70 | 80 | mΩ | |
| VGS=2.5V, IC=3.1A | 85 | 115 | ||||
| Forward trans conductance (a) | gfs | VDS=5V, ID=3.6A | 8 | S | ||
| Diode forward voltage | VSD | IS=0.94A, VGS=0V | 0.76 | 1.2 | V | |
| Dynamic Characteristics (b) | ||||||
| Input capacitance | Ciss | VDS=10V, VGS=0V,f=1MHz | 300 | pF | ||
| Output capacitance | Coss | 120 | ||||
| Reverse Transfer capacitance | Crss | 80 | ||||
| Total gate charge | Qg | VDS=10V, VGS=4.5V,ID=3.6A | 4.0 | 10 | nC | |
| Gate-source charge | Qgs | 0.65 | ||||
| Gate-drain charge | Qgd | 1.5 | ||||
| Switching (b) | ||||||
| Turn-on Time | td(on) | VDD=10V, RL=5.5Ω, VGEN=4.5V, ID≈3.6A, RG=6Ω | 7 | 15 | ns | |
| Rise time | tr | 55 | 80 | |||
| Turn-off Time | td(off) | 16 | 60 | |||
| Fall time | tf | 10 | 25 | |||
Notes:
a. Pulse Test: Pulse Width ≤300us, Duty Cycle ≤2%.
b. Not specified in detail, refer to original datasheet for full conditions.
2411220336_JUXING-SI2302_C5356028.pdf
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