P Channel MOSFET with Continuous Drain Current of 2.4A and 20V Drain Source Voltage KUU WPM2015 3 TR
Key Attributes
Model Number:
WPM2015-3/TR
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.4A
Operating Temperature -:
-
RDS(on):
110mΩ@4.5V,2.7A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
54pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
534pF@10V
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
7.3nC@4.5V
Mfr. Part #:
WPM2015-3/TR
Package:
SOT-23-3
Product Description
Product Overview
This P-Channel MOSFET features a 20V Drain-Source Voltage (VDS) and low on-resistance (RDS(on)MAX) of 110m at -4.5V and 150m at -2.5V. With a continuous drain current (ID) of -2.4A, it is designed for high-density cell applications and offers an extremely low threshold voltage. Its excellent ON resistance makes it suitable for higher DC current applications.
Product Attributes
- Device Code: WT1
- Marking: WT1 = Device Code, * = Month (A~Z)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | -2.4 | A | |||
| Pulsed Diode Current | IDM | -10 | A | |||
| Power Dissipation | PD | 1.1 | W | |||
| Thermal Resistance from Junction to Ambient (t10s) | RJA | 125 | /W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = -250A | -20 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = -250A | -0.4 | -1 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = 8V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = -16V, VGS =0V | -1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS = -4.5V, ID = -2.7A | 81 | 110 | m | |
| VGS = -2.5V, ID = -2A | 103 | 150 | m | |||
| Forward transconductance | gfs | VDS = -4.5V, ID = -2.4A | 10 | S | ||
| Diode forward voltage | VSD | IS= -1A,VGS=0V | -0.8 | -1.5 | V | |
| Input capacitance | Ciss | VDS = -10V,VGS =0V, f=1MHz | 534 | pF | ||
| Output capacitance | Coss | 62 | pF | |||
| Reverse transfer capacitance | Crss | 54 | pF | |||
| Total gate charge | Qg | VDS = -10V,VGS = -4.5V, ID = -2.4A | 7.3 | nC | ||
| Gate-source charge | Qgs | 1.25 | nC | |||
| Gate-drain charge | Qg | 1.2 | nC | |||
| Gate resistance | Rg | f=1MHz | 0.5 | 3.2 | ||
| Turn-on delay time | td(on) | VDS= -10V RL=3.5, ID -1A, VGEN= -4.5V,Rg=3 | 8.0 | ns | ||
| Rise time | tr | 6.4 | ns | |||
| Turn-off delay time | td(off) | 41 | ns | |||
| Fall time | tf | 7 | ns | |||
| Continuous Source-Drain Diode Current | IS | Tc=25 | -1.2 | A | ||
| Pulsed Diode forward Current | ISM | -10 | A |
2410121720_KUU-WPM2015-3-TR_C6562215.pdf
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