Low On Resistance P Channel MOSFET KEXIN KI2307DS Suitable for Switching and Amplification Circuits
Key Attributes
Model Number:
KI2307DS
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
3V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF@15V
Number:
1 P-Channel
Output Capacitance(Coss):
126pF
Input Capacitance(Ciss):
565pF@15V
Pd - Power Dissipation:
800mW
Gate Charge(Qg):
10nC@15V
Mfr. Part #:
KI2307DS
Package:
SOT-23
Product Description
Product Overview
The SI2307DS (KI2307DS) is a P-Channel Enhancement MOSFET designed for various electronic applications. It features a drain-source voltage of -30V and a continuous drain current of -3.0A at VGS = -10V. With low on-resistance (RDS(ON) < 80m at VGS = -10V), this MOSFET offers efficient power handling and is suitable for switching and amplification circuits.
Product Attributes
- Brand: Kexin
- SMD Type: SOT-23-3
- Origin: China (implied by www.kexin.com.cn)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1.0 | V | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=-10V, ID=-3A | 64 | 80 | m | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-4.5V, ID=-2.5A | 103 | 140 | m | |
| Continuous Drain Current | ID | Ta = 25, VGS = -10V | -3.0 | A | ||
| Continuous Drain Current | ID | Ta = 70, VGS = -10V | -2.5 | A | ||
| Pulsed Drain Current | IDM | Ta = 25, 5 sec | -12 | A | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain-Source Voltage | VDS | -30 | V | |||
| Power Dissipation | PD | Ta = 25, t5 sec | 1.25 | W | ||
| Power Dissipation | PD | Ta = 70, t5 sec | 0.8 | W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | t5 sec, Surface mounted on FR4 board | 100 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Junction and Storage Temperature Range | Tstg | -55 | 150 | |||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-15V | -1.0 | A | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 565 | pF | ||
| Output Capacitance | Coss | VDS=-15V, VGS=0V, f=1MHz | 126 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, f=1MHz | 75 | pF | ||
| Total Gate Charge | Qg | VGS=-15V, VDS=-15V, ID=-3A *1 | 10 | 15 | nC | |
| Gate Source Charge | Qgs | VGS=-15V, VDS=-15V, ID=-3A *1 | 1.9 | nC | ||
| Gate Drain Charge | Qg d | VGS=-15V, VDS=-15V, ID=-3A *1 | 2 | nC | ||
| Turn-On DelayTime | td(on) | VGS=-10V, VDS=-15V, RL=15,RGEN=6 | 10 | 20 | ns | |
| Turn-On Rise Time | tr | VGS=-10V, VDS=-15V, RL=15,RGEN=6 | 9 | 20 | ns | |
| Turn-Off DelayTime | td(off) | VGS=-10V, VDS=-15V, RL=15,RGEN=6 | 27 | 50 | ns | |
| Turn-Off Fall Time | tf | VGS=-10V, VDS=-15V, RL=15,RGEN=6 | 7 | 16 | ns | |
| Maximum Body-Diode Continuous Current | IS | -1.25 | A | |||
| Diode Forward Voltage | VSD | IS=-1.25A,VGS=0 | -1.2 | V |
2410121813_KEXIN-KI2307DS_C489365.pdf
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