KIA Semicon Tech KCY3310A DFN5x6 Package 100V MOSFET Featuring Low RDSon and Excellent Switching Characteristics
Key Attributes
Model Number:
KCY3310A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
85A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
43pF
Number:
-
Output Capacitance(Coss):
1.25nF
Input Capacitance(Ciss):
4.6nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
66nC@10V
Mfr. Part #:
KCY3310A
Package:
DFN-8(5x6)
Product Description
Product Overview
The KCX3310A is a 100V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, designed with advanced SGT technology for low RDS(on) and excellent FOM. It offers extremely low switching loss, fast switching, and soft recovery, making it ideal for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. Key features include low On-Resistance (typ. 5.0m) and excellent stability and uniformity.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
- Product Name: KCX3310A
Technical Specifications
| Part Number | Package | Brand | VDSS (V) | RDS(on) (m) | ID (A) | PD (W) | VGS(th) (V) | Qg (nC) | trr (ns) |
|---|---|---|---|---|---|---|---|---|---|
| KCB3310A | TO-263 | KIA | 100 | 5.0 (typ.) | 90 (TC=25C) / 57 (TC=100C) | 166 (TC=25C) / 66.4 (TC=100C) | 2 - 4 | 66 | 65 |
| KCY3310A | DFN5*6 | KIA | 100 | 5.0 (typ.) | 85 (TC=25C) / 56 (TC=100C) | 90 (TC=25C) / 36 (TC=100C) | 2 - 4 | 66 | 65 |
2409302203_KIA-Semicon-Tech-KCY3310A_C2839426.pdf
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