Low on resistance N channel MOSFET KUU 2SK3018 suitable for portable devices and easy drive circuit design
Key Attributes
Model Number:
2SK3018
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-
RDS(on):
13Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
9pF
Pd - Power Dissipation:
200mW
Input Capacitance(Ciss):
13pF
Mfr. Part #:
2SK3018
Package:
SOT-23
Product Description
Product Overview
This N-channel MOSFET features low on-resistance and fast switching speed, making it ideal for portable equipment due to its low voltage drive capability. Its easily designed drive circuits and suitability for paralleling enhance its application flexibility.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 10A | 30 | V | ||
| Continuous Drain Current | ID | 0.1 | A | |||
| Gate-Source leakage current | IGSS | VGS =20V, VDS = 0V | 500 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS =3V, ID =100A | 0.8 | 1.5 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS = 4V, ID =10mA | 8 | |||
| Drain-Source On-Resistance | RDS(on) | VGS =2.5V,ID =1mA | 13 | |||
| Forward Transconductance | gFS | VDS =3V, ID = 10mA | 20 | mS | ||
| Input Capacitance | Ciss | VDS =5V,VGS =0V,f =1MHz | 13 | pF | ||
| Output Capacitance | Coss | VDS =5V,VGS =0V,f =1MHz | 9 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =5V,VGS =0V,f =1MHz | 4 | pF | ||
| Turn-On Delay Time | td(on) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 15 | ns | ||
| Rise Time | tr | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 35 | ns | ||
| Turn-Off Delay Time | td(off) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 80 | ns | ||
| Fall Time | tf | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 80 | ns | ||
| Power Dissipation | PD | 0.2 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | |||
| Gate-Source Voltage | VGSS | 20 | V |
2410121314_KUU-2SK3018_C2944164.pdf
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