Robust and KIA Semicon Tech KPD6610B P channel MOSFET with guaranteed electrical availability system
Key Attributes
Model Number:
KPD6610B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
170mΩ@10V
Operating Temperature -:
-55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds):
29pF
Output Capacitance(Coss):
41pF
Input Capacitance(Ciss):
1.228nF
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
KPD6610B
Package:
TO-252
Product Description
Product Overview
The KIA SEMICONDUCTORS KPD6610B is a high-performance P-CHANNEL MOSFET featuring Advanced Trench MOS Technology. It offers guaranteed 100% EAS (Electricals Available System) and is known for its reliability and ruggedness. This green device is suitable for power management and DC motor control applications.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KPD6610B
- Package: TO-252
- Origin: KIA
- Certifications: Green Device Available
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-5A | - | 170 | 210 | m |
| VGS=-4.5V, ID=-5A | - | 190 | 240 | m | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=-250uA | -1.2 | - | -2.5 | V |
| Drain-Source Leakage Current | IDSS | VDS=-80V,VGS=0V,TJ=25C | - | - | 1 | uA |
| VDS=-80V,VGS=0V,TJ=85C | - | - | 30 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -100 | - | - | V |
| Continuous Drain Current | ID | TC=25C | - | - | -15 | A |
| Continuous Drain Current | ID | TC=100C | - | - | -10.5 | A |
| Pulsed Drain Current | IDM | - | - | -60 | A | |
| Avalanche Energy | EAS | - | 49 | - | mJ | |
| Avalanche Current | IAS | - | -14 | - | A | |
| Total Power Dissipation | PD | - | - | 61 | W | |
| Gate Resistance | Rg | VDS=0V, VGS=0V,f=1MHz | - | 13 | - | |
| Total Gate Charge | Qg | VDS=-50V, VGS=-10V , ID=-5A | - | 19 | - | nC |
| Gate-Source Charge | Qgs | - | 3.4 | - | nC | |
| Gate-Drain Charge | Qgd | - | 2.9 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=-30V,VGS=-10V, RG=3.3,ID=-1A | - | 9 | - | ns |
| Rise Time | Tr | - | 6 | - | ns | |
| Turn-Off DelayTime | Td(off) | - | 39 | - | ns | |
| Fall Time | Tf | - | 33 | - | ns | |
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | - | 1228 | - | pF |
| Output Capacitance | Coss | - | 41 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 29 | - | pF | |
| Continuous Source Current | IS | VG=VD=0V, Force Current | - | - | -5 | A |
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A , TJ=25C | - | - | -1.2 | V |
| Gate-to-Source Voltage | VGS | -20 | - | 20 | V | |
| Operation Junction Temperature Range | TJ | -55 | - | 150 | C | |
| Storage Temperature Range | TSTG | -55 | - | 150 | C | |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 55 | C/W | |
| Thermal Resistance, Junction-to-Case | RJC | - | 2.05 | - | C/W |
2508261745_KIA-Semicon-Tech-KPD6610B_C7465121.pdf
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