Low On State Resistance N Channel MOSFET KUU AO3416 Suitable for Portable Devices and Power Management
Key Attributes
Model Number:
AO3416
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-
RDS(on):
20mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
1 N-channel
Output Capacitance(Coss):
104pF
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
1.16nF
Gate Charge(Qg):
13nC@4.5V
Mfr. Part #:
AO3416
Package:
SOT-23-3L
Product Description
Product Overview
N-Channel 20-V(D-S) MOSFET featuring TrenchFET technology. This MOSFET is designed for load switching in portable devices and DC/DC converters, offering low on-state resistance at various gate voltages.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | 6.5 | A | |||
| Pulsed Diode Current | IDM | 15 | A | |||
| Continuous Source-Drain Current (Diode Conduction) | IS | 0.8 | A | |||
| Power Dissipation | PD | 1.4 | W | |||
| Thermal Resistance from Junction to Ambient (t5s) | RJA | 125 | /W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = 250A | 20 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = 250A | 0.4 | 1.1 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = 8V | 10 | A | ||
| Zero gate voltage drain current | IDSS | VDS = 20V, VGS =0V | 1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS = 4.5V, ID = 4A | 17 | 20 | m | |
| VGS = 2.5V, ID = 2A | 20 | 25 | m | |||
| VGS = 1.8V, ID = 1A | 25 | 34 | m | |||
| Forward transconductance | gfs | VDS = 4.5V, ID = 4A | 20 | S | ||
| Diode forward voltage | VSD | IS=1.6A,VGS=0V | 0.7 | 1.3 | V | |
| Input capacitance | Ciss | VDS = 10V,VGS =0V, f=1MHz | 1160 | pF | ||
| Output capacitance | Coss | VDS = 10V,VGS =0V, f=1MHz | 104 | pF | ||
| Reverse transfer capacitance | Crss | VDS = 10V,VGS =0V, f=1MHz | 29 | pF | ||
| Total gate charge | Qg | VDS = 10V,VGS = 4.5V, ID = 4A | 10 | 13 | nC | |
| Gate-source charge | Qgs | VDS = 10V,VGS = 4.5V, ID = 4A | 1.4 | 1.82 | nC | |
| Gate-drain charge | Qg d | VDS = 10V,VGS = 4.5V, ID = 4A | 2.7 | 3.51 | nC | |
| Gate resistance | Rg | f=1MHz | 6 | |||
| Turn-on delay time | td(on) | VDD= 10V RL=1.5, ID 1A, VGEN= 4.5V,Rg=3 | 6.2 | 12.4 | ns | |
| Rise time | tr | VDD= 10V RL=1.5, ID 1A, VGEN= 4.5V,Rg=3 | 12.7 | 25.4 | ns | |
| Turn-off delay time | td(off) | VDD= 10V RL=1.5, ID 1A, VGEN= 4.5V,Rg=3 | 51.7 | 103.4 | ns | |
| Fall time | tf | VDD= 10V RL=1.5, ID 1A, VGEN= 4.5V,Rg=3 | 16 | 32 | ns | |
| Continuous Source-Drain Diode Current | IS | Tc=25 | 3.2 | A |
2410010332_KUU-AO3416_C20616027.pdf
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