P channel mosfet KIA Semicon Tech KPD6115A designed for smps 2nd synchronous rectifier and vga vcore applications
Key Attributes
Model Number:
KPD6115A
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
10A
RDS(on):
300mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
408pF
Pd - Power Dissipation:
89W
Input Capacitance(Ciss):
2.109nF
Output Capacitance(Coss):
513pF
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
KPD6115A
Package:
TO-252
Product Description
Product Overview
This P-CHANNEL MOSFET, rated at -10A and -150V, features advanced high cell density Trench technology for minimized conductive loss and fast switching due to low Gate Charge. It offers low thermal resistance and is 100% Avalanche and DVDS tested. Applications include MB/VGA Vcore, SMPS 2nd Synchronous Rectifier, POL applications, and BLDC Motor drivers.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
- Model: 6115A
- Part Numbers: KPY6115A (DFN5*6 package), KPD6115A (TO-252 package)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Continuous Drain Current | ID | VGS @ -10V, TC=25C | -10 | A | ||
| TC=100C | -6.4 | A | ||||
| Pulsed Drain Current | IDM | -40 | A | |||
| Total Power Dissipation | PD | TC=25C | 89 | W | ||
| TC=100C | 35 | W | ||||
| Avalanche Energy | EAS | 30.2 | mJ | |||
| Avalanche Current | IAS | -11 | A | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -150 | V | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-5A | 300 | 320 | m | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=-250uA | -2.0 | -4.0 | V | |
| Drain-Source Leakage Current | IDSS | VDS=-150V,VGS=0V,TJ=25C | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Forward Transconductance | gfs | VDS=-5V, ID=-3A | 11 | S | ||
| Gate Resistance | Rg | VDS=0V, VGS=0V, f=1MHz | 5.7 | |||
| Input Capacitance | Ciss | VDS=-40V, VGS=0V , f=1MHz | 2109 | pF | ||
| Output Capacitance | Coss | 513 | pF | |||
| Reverse Transfer Capacitance | Crss | 408 | pF | |||
| Total Gate Charge | Qg | VDS=-50V, VGS=-10V , ID=-3A | 35 | nC | ||
| Gate-Source Charge | Qgs | 6 | nC | |||
| Gate-Drain Charge | Qg | 8.5 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-50V,VGS=-10V, RG=3,ID=-3A | 28 | ns | ||
| Rise Time | Tr | 30 | ns | |||
| Turn-Off DelayTime | Td(off) | 230 | ns | |||
| Fall Time | Tf | 130 | ns | |||
| Continuous Source Current | IS | VG=VD=0V, Force Current | -10 | A | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=-5A , TJ=25C | -1.2 | V | ||
| Reverse Recovery Time | trr | IF=-5A , TJ=25C dI/dt=100A/s | 34 | nS | ||
| Reverse Recovery Charge | Qrr | 32 | nC | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | C | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 20 | C/W | |||
| Thermal Resistance, Junction-to-Case | RJC | 1.4 | C/W |
2507111630_KIA-Semicon-Tech-KPD6115A_C49328616.pdf
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