Power management N CHANNEL MOSFET KIA Semicon Tech KIA3510AB 75A 100V switching applications device
Key Attributes
Model Number:
KIA3510AB
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
75A
Operating Temperature -:
-
RDS(on):
14mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
179pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.946nF
Output Capacitance(Coss):
339pF
Pd - Power Dissipation:
166W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
KIA3510AB
Package:
TO-263
Product Description
Product Overview
This is a 75A, 100V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model 3510A. It is designed for switching applications and power management in inverter systems. Key features include a low on-resistance (RDS(on)=9m typ.), 100% avalanche tested, and a reliable, rugged construction. Lead-free and green device options are available, complying with RoHS standards.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: 3510A
- Channel Type: N-CHANNEL
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | TO-220/263 | TO-252 | Units | Conditions |
| Drain-source voltage | VDSS | 100 | 100 | V | |
| Gate-source voltage | VGSS | 25 | V | ||
| Maximum junction temperature | TJ | 175 | C | ||
| Storage temperature range | TSTG | -55 to175 | C | ||
| Continuous drain current | ID | 75 | 65 | A | TC=25C |
| 51 | 44 | A | TC=100C | ||
| Pulsed drain current | IDP | 219 | A | TC=25C | |
| Avalanche current | IAS | 30 | A | ||
| Avalanche energy | EAS | 225 | mJ | ||
| Maximum power dissipation | PD | 166 | W | TC=25 C | |
| 83 | W | TC=100C | |||
| Thermal resistance, Junction-ambient | RJA | 62.5 | C/W | ||
| Thermal resistance, Junction-case | RJC | 0.9 | C/W | ||
| Drain-source breakdown voltage | BVDSS | 100 | V | VGS=0V,IDS=250a | |
| Zero gate voltage drain current | IDSS | 1 | A | VDS=80V, VGS=0V | |
| 20 | A | TJ=125C | |||
| Gate threshold voltage | VGS(th) | 2.0 3.0 4.0 | V | VDS=VGS, ID=250A | |
| Gate leakage current | IGSS | +100 | nA | VGS=+25V, VDS=0V | |
| Drain-source on-state resistance | RDS(on)1 | 9 11 | 9 14 | m | VGS=10V,IDS=50A |
| Gate resistance | Rg | 1.2 | VDS=0V, VGS=0V,f=1MHz | ||
| Diode forward voltage | VSD1 | 1.3 | V | ISD=50A, VGS=0V | |
| Reverse recovery time | trr | 46 | nS | ISD=50A , dlSD/dt=100A/s | |
| Reverse recovery charge | Qrr | 86 | nC | ||
| Input capacitance | Ciss | 2946 | pF | VDS=25V,VGS=0V, f=1MHz | |
| Output capacitance | Coss | 339 | pF | ||
| Reverse transfer capacitance | Crss | 179 | pF | ||
| Turn-on delay time | td(on) | 15 | ns | VDD=50V,IDS=30A, RG=6.8,VGS=10V | |
| Rise time | tr | 108 | ns | ||
| Turn-off delay time | td(off) | 51 | ns | ||
| Fall time | tf | 59 | ns | ||
| Total gate charge | Qg | 60 | nC | VDS=50V,VGS=10V IDS=30A | |
| Gate-source charge | Qgs | 13.7 | nC | ||
| Gate-drain charge | Qgd | 22.8 | nC | ||
2410010000_KIA-Semicon-Tech-KIA3510AB_C176865.pdf
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