N Channel MOSFET KIA Semicon Tech KCT1808A 80V Featuring Low RDS on for DC DC Converter Applications
Key Attributes
Model Number:
KCT1808A
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
240A
RDS(on):
1.25mΩ@10V,50A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
1.303nF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
15.022nF@40V
Pd - Power Dissipation:
250W
Mfr. Part #:
KCT1808A
Package:
TOLL-8
Product Description
Product Overview
The KCT1808A is an 80V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, utilizing advanced SGT technology for extremely low RDS(on) of 1.25m (typ.) at VGS=10V and an excellent figure of merit (FOM). This high-performance MOSFET is designed for applications such as motor control and drives, battery management, DC/DC converters, and general-purpose applications.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KCT1808A
- Package: TOLL-8
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V, ID=250uA | 80 | V |
| Gate threshold voltage | VGS(th ) | VDS=VGS,ID=250uA,Tj=25C | 2 - 4 | V |
| Zero gate voltage drain current | IDSS | VDS=80V,VGS=0V,Tj=25C | - - 1 | A |
| Zero gate voltage drain current | IDSS | VDS=64V,VGS=0V,Tj=125C | - - 10 | A |
| Gate-source leakage current | IGSS | VGS=20V,VDS=0V | - - 100 | nA |
| Drain-source on-state resistance | RDS(on) | VGS=10V, ID=50A,Tj=25C | - 1.25 2 | m |
| Transconductance | gfs | VDS=5V,ID=40A | - 227 - | S |
| Input Capacitance | Ciss | VGS=0V, VDS=40V, f=1MHz | - 15022 - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=40V, f=1MHz | - 2523 - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=40V, f=1MHz | - 1303 - | pF |
| Gate Total Charge | QG | VGS=10V, VDS=40V, ID=50A | - 205 - | nC |
| Gate-Source charge | Qgs | VGS=10V, VDS=40V, ID=50A | - 54 - | nC |
| Gate-Drain charge | Qg d | VGS=10V, VDS=40V, ID=50A | - 46 - | nC |
| Turn-on delay time | td(on) | Tj=25C, VGS=10V, VDS=40V, RL=3 | - 38 - | ns |
| Rise time | tr | Tj=25C, VGS=10V, VDS=40V, RL=3 | - 132 - | ns |
| Turn-off delay time | td(off) | Tj=25C, VGS=10V, VDS=40V, RL=3 | - 126 - | ns |
| Fall time | tf | Tj=25C, VGS=10V, VDS=40V, RL=3 | - 153 - | ns |
| Gate resistance | RG | VGS=0V, VDS=0V,f=1MHz | - 1.85 - | |
| Body Diode Forward Voltage | VSD | VGS=0V, ISD=50A | - 0.8 1.2 | V |
| Body Diode Reverse Recovery Time | trr | IF=30A, dI/dt=500A/s | - 112 - | ns |
| Body Diode Reverse Recovery Charge | Qrr | IF=30A, dI/dt=500A/s | - 220 - | nC |
2410121231_KIA-Semicon-Tech-KCT1808A_C7465112.pdf
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