KEC KDS114E-RTL HA Silicon Epitaxial Planar Diode Featuring Dissipation and Reverse Voltage for VHF
Key Attributes
Model Number:
KDS114E-RTL/HA
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA@15V
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
35V
Pd - Power Dissipation:
100mW
Voltage - Forward(Vf@If):
850mV@2mA
Current - Rectified:
100mA
Mfr. Part #:
KDS114E-RTL/HA
Package:
ESC
Product Description
Product Overview
The KDS114E is a silicon epitaxial planar diode designed for VHF tuner band switch applications. It features a small package, low total capacitance (CT=1.2pF Max.), and low series resistance (rS=0.5 Typ.). The suffix U indicates qualification to AEC-Q101 standards.
Product Attributes
- Brand: SEMICONDUCTOR
- Type: Silicon Epitaxial Planar Diode
- Qualification: AEC-Q101 (Suffix U)
Technical Specifications
| Characteristic | Symbol | Test Condition | Rating | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|
| Maximum Rating (Ta=25) | |||||||
| Reverse Voltage | VR | 35 | V | ||||
| Forward Current | IF | 100 | mA | ||||
| Power Dissipation | PD | 100 | mW | ||||
| Junction Temperature | Tj | 150 | |||||
| Storage Temperature Range | Tstg | -55150 | |||||
| Electrical Characteristics (Ta=25) | |||||||
| Forward Voltage | VF | IF=2mA | V | 0.85 | |||
| Reverse Current | IR | VR=15V | A | 0.1 | |||
| Reverse Voltage | VR | IR=1A | 35 | V | |||
| Total Capacitance | CT | VR=6V, f=1MHz | pF | 0.7 | 1.2 | ||
| Series Resistance | rS | IF=2mA, f=100MHz | 0.5 | 0.9 | |||
Dimensions (Unit: mm)
| A | B | C | D | E | F | G | |
|---|---|---|---|---|---|---|---|
| DIM | 1.60 0.10 | 1.20 0.10 | 0.80 0.10 | 0.30 0.05 | 0.60 0.10 | 0.13 0.05 | 0.20 0.10 |
2410121849_KEC-KDS114E-RTL-HA_C7463700.pdf
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