160A 60V N CHANNEL MOSFET KIA Semicon Tech KIA2806A with Lead Free Construction and RoHS Certified
Key Attributes
Model Number:
KIA2806A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-
RDS(on):
4.5mΩ@10V,60A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
334pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.376nF
Output Capacitance(Coss):
857pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
130nC@10V
Mfr. Part #:
KIA2806A
Package:
TO-220
Product Description
Product Overview
This is a 160A, 60V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model 2806A. It offers a low on-resistance of 3.5m (typ.) at VGS=10V, is 100% avalanche tested, and provides reliable and rugged performance. It is available as a lead-free and green device, compliant with RoHS standards. This MOSFET is suitable for switching applications, power management in inverter systems, and Uninterruptible Power Supply (UPS) systems.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 2806A
- Type: N-CHANNEL MOSFET
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Rating | Units | TO-220/263 | TO-247/3P |
| Drain-source voltage | VDSS | 60 | V | ||
| Gate-source voltage | VGSS | +25 | V | ||
| Maximum junction temperature | TJ | 175 | C | ||
| Storage temperature range | TSTG | -55 to175 | C | ||
| Diode continuous forward current (TC=25C) | IS | 160 | A | ||
| Continuous drain current (TC=25C) | ID3 | 160 | A | ||
| Continuous drain current (TC=100C) | ID3 | 105 | A | ||
| Pulse drain current* (TC=25C) | IDM4 | 580 | A | ||
| Avalanche energy,single pulsed (L=0.5mH) | EAS5 | 400 | mJ | ||
| Maximum power dissipation (TC=25 C) | PD | 185 | W | ☐ | ☐ |
| Maximum power dissipation (TC=25 C) | PD | 277 | W | ☐ | |
| Maximum power dissipation (TC=100C) | PD | 92.5 | W | ☐ | |
| Maximum power dissipation (TC=100C) | PD | 138.5 | W | ☐ | |
| Thermal resistance,Junction-ambient | RJA | 62.5 | C/W | ||
| Thermal resistance,Junction-case | RJC | 0.81 | C/W | ||
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0V,IDS=250A | |
| Zero gate voltage drain current | IDSS | 1 | A | VDS=48V, VGS=0V | |
| Zero gate voltage drain current (TJ=85C) | IDSS | 10 | A | VDS=48V, VGS=0V | |
| Gate threshold voltage | VGS(th) | 2.0-4.0 | V | VDS=VGS, ID=250A | |
| Gate leakage current | IGSS | +100 | nA | VGS=+25V, VDS=0V | |
| Drain-source on-state resistance | RDS(on)1 | 3.5-4.5 | m | VGS=10V,ID=60A | |
| Gate resistance | Rg | 0.7 | VDS=0V, VGS=0V,f=1MHz | ||
| Diode forward voltage | VSD1 | 0.8-1.2 | V | ISD=60A, VGS=0V | |
| Reverse recovery time | trr2 | 30 | nS | IF=60A ,VDD=50V dlSD/dt=100A/s | |
| Reverse recovery charge | Qrr2 | 50 | nC | IF=60A ,VDD=50V dlSD/dt=100A/s | |
| Input capacitance | Ciss2 | 4376 | pF | VDS=25V,VGS=0V, f=1MHz | |
| Output capacitance | Coss2 | 857 | pF | VDS=25V,VGS=0V, f=1MHz | |
| Reverse transfer capacitance | Crss2 | 334 | pF | VDS=25V,VGS=0V, f=1MHz | |
| Turn-on delay time | td(on)2 | 28 | ns | VDD=30V, IDS=60A, RG=25,VGS=10V | |
| Rise time | tr2 | 18 | ns | VDD=30V, IDS=60A, RG=25,VGS=10V | |
| Turn-off delay time | td(off)2 | 42 | ns | VDD=30V, IDS=60A, RG=25,VGS=10V | |
| Fall time | tf2 | 54 | ns | VDD=30V, IDS=60A, RG=25,VGS=10V | |
| Total gate charge | Qg2 | 130 | nC | VDS=48V, VGS=10V IDS=60A | |
| Gate-source charge | Qgs2 | 24 | -- | VDS=48V, VGS=10V IDS=60A | |
| Gate-drain charge | Qgd2 | 47 | -- | VDS=48V, VGS=10V IDS=60A |
2409302333_KIA-Semicon-Tech-KIA2806A_C135563.pdf
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