Ultra high speed switching diode KEC KDS4148U-RTK/P silicon epitaxial planar diode with USC package

Key Attributes
Model Number: KDS4148U-RTK/P
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
500nA@75V
Reverse Recovery Time (trr):
1.6ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
-
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
900mV@100mA
Current - Rectified:
150mA
Mfr. Part #:
KDS4148U-RTK/P
Package:
USC
Product Description

Product Overview

The KDS4148U is a silicon epitaxial planar diode designed for ultra-high speed switching applications. It features a small USC package, low forward voltage, fast reverse recovery time, and small total capacitance, making it suitable for demanding electronic circuits.

Product Attributes

  • Brand: KDS (implied by product name)
  • Type: Silicon Epitaxial Planar Diode
  • Application: Ultra High Speed Switching
  • Package: USC

Technical Specifications

Characteristic Symbol Rating Unit Test Condition Min. Typ. Max.
Maximum Rating (Ta=25)
Maximum (Peak) Reverse Voltage VRM 100 V
Reverse Voltage VR 75 V
Maximum (Peak) Forward Current IFM 450 mA
Average Forward Current IO 150 mA
Surge Current (10ms) IFSM 2 A
Power Dissipation PD* 200 mW * Mounted on a glass epoxy circuit board of 2020, Pad dimension of 44.
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Electrical Characteristics (Ta=25)
Forward Voltage VF(1) V IF=1mA - 0.60 -
Forward Voltage VF(2) V IF=10mA - 0.72 -
Forward Voltage VF(3) V IF=100mA - 0.90 1.20
Reverse Current IR A VR=75V - - 0.5
Total Capacitance CT pF VR=0V, f=1MHz - 0.9 2.0
Reverse Recovery Time trr nS IF=10mA - 1.6 4.0

2409302202_KEC-KDS4148U-RTK-P_C112697.pdf

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