500V N CHANNEL MOSFET KIA Semicon Tech KIA28N50HH Designed for Cell Phone Chargers and Power Supplies
Key Attributes
Model Number:
KIA28N50HH
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
28A
RDS(on):
160mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
29pF
Input Capacitance(Ciss):
2.555nF
Output Capacitance(Coss):
355pF
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
KIA28N50HH
Package:
TO-3P
Product Description
Product Overview
The KIA28N50H is a 500V N-CHANNEL MOSFET designed for various power supply applications. It offers low RDS(ON) of 0.16 (typ.) at VGS=10V, low gate charge, low Crss, and improved dv/dt capability. This RoHS compliant component is 100% avalanche tested and suitable for LED power supplies, cell phone chargers, and standby power applications.
Product Attributes
- Brand: KIA
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | TO-220F Rating | TO-3P Rating | Unit |
| Drain-source breakdown voltage | VDSS | 500 | 500 | V |
| Gate-to-Source Voltage | VGSS | 30 | V | |
| Continuous drain current | ID | 28* | A | |
| Pulsed Drain Current | IDM | 80* | A | |
| Single pulse avalanche energy | EAS | 1110 | mJ | |
| Avalanche Current | IAR | 20 | A | |
| Repetitive Avalanche Energy | EAR | 25 | mJ | |
| Peak Diode Recovery dv/dt | dv/dt | 20 | V/ns | |
| Power dissipation (TC=25C) | PD | 50 | 138 | W |
| Derate above 25C | 0.3 | 0.83 | W/C | |
| Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds | TL | 300 | C | |
| Operating junction and storage temperature range | TJ ,TSTG | -55 to150 | C | |
| Drain-source leakage current | IDSS | 1 | uA | |
| Gate-source forward leakage | IGSS | 100 | nA | |
| Drain-source on-resistance | RDS(on) | 0.16 (typ.) / 0.24 (max) | ||
| Gate threshold voltage | VGS(TH) | 2.0 - 4.0 | V | |
| Forward Transconductance | gfs | 25 (typ.) | S | |
| Input capacitance | Ciss | 2555 (typ.) | pF | |
| Output capacitance | Coss | 355 (typ.) | pF | |
| Reverse transfer capacitance | Crss | 29 (typ.) | pF | |
| Total gate charge | Qg | 45 (typ.) | nC | |
| Gate-source charge | Qgs | 12 (typ.) | nC | |
| Gate-drain charge | Qgd | 18 (typ.) | nC | |
| Turn-on delay time | td(on) | 46 (typ.) | ns | |
| Rise time | tr | 118 (typ.) | ns | |
| Turn-off delay time | td(off) | 105 (typ.) | ns | |
| Fall time | tf | 62 (typ.) | ns | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 20 | A | |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 80 | A | |
| Diode forward voltage | VSD | 1.5 (typ.) | V | |
| Reverse Recovery Time | trr | 154 (typ.) | nS | |
| Reverse Recovery Charge | Qrr | 0.5 (typ.) | nC | |
2508261745_KIA-Semicon-Tech-KIA28N50HH_C7465114.pdf
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