N channel MOSFET KIA Semicon Tech KNH2908B featuring high EAS and avalanche voltage characterization
Key Attributes
Model Number:
KNH2908B
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
380pF
Number:
-
Output Capacitance(Coss):
460pF
Input Capacitance(Ciss):
7.95nF
Gate Charge(Qg):
160nC@10V
Mfr. Part #:
KNH2908B
Package:
TO-3PF-3
Product Description
Product Overview
The KIA SEMICONDUCTORS KNX2908B is an N-CHANNEL MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design contributes to lower RDS(ON), and it is fully characterized for avalanche voltage and current, ensuring good stability and uniformity with high EAS. The package is designed for effective heat dissipation.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KNX2908B, KNP2908B, KNH2908B
- Origin: KIA SEMICONDUCTORS (implied from branding)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Features | ||||||
| Drain-source voltage | VDS | 80 | V | |||
| Continuous drain current | ID | 130 | A | |||
| RDS(ON) (typ.) | RDS(ON) | VGS=10V | 5.0 | 6.0 | m | |
| Absolute Maximum Ratings | ||||||
| Drain-source voltage | VDS | 80 | V | |||
| Gate-source voltage | VGS | +20 | V | |||
| Continuous drain current | ID | 130 | A | |||
| Pulsed drain current (Note1) | IDM | 520 | A | |||
| Single pulse avalanche energy (Note2) | EAS | 900 | mJ | |||
| Power Dissipation | PD | Derating Factor above 25C | 245 | W/C | ||
| Operation junction and temperature range | TJ, TSTG | -55 | 175 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.61 | C /W | |||
| Electrical Characteristics (TA=25C, unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0V, ID=250A | 80 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V, VGS=0V | - | - | 1 | A |
| Gate-Source Forward Leakage | IGSS(F) | VGS=+20V | - | - | 100 | nA |
| Gate-Source Reverse Leakage | IGSS(R) | VGS=-20V | - | - | -100 | nA |
| On Characteristics | ||||||
| Drain-source on-Resistance (Note3) | RDS(on) | VGS=10V, ID=35A | - | 5.0 | 6.0 | m |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | 2.9 | 4.0 | V |
| Forward Transconductance | gfs | VDS=5V, ID=20A | - | 42 | - | S |
| Dynamic Characteristics | ||||||
| Total gate charge | Qg | VDD=40V, VGS=10V, ID =20A | - | 160 | - | nC |
| Gate-source charge | Qgs | - | 31 | - | ||
| Gate-drain charge | Qgd | - | 50 | - | ||
| Turn-on delay time | td(on) | VDD=30V, ID=40A, RGEN=3, VGS=10V | - | 24 | - | ns |
| Rise time | tr | - | 41 | - | ||
| Turn-off delay time | td(off) | - | 75 | - | ||
| Fall time | tf | - | 25 | - | ||
| Switching Characteristics (Note 4) | ||||||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | - | 7950 | - | pF |
| Output capacitance | Coss | - | 460 | - | ||
| Reverse transfer capacitance | Crss | - | 380 | - | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward voltage | VSD | VGS=0V, IS=20A | - | - | 1.3 | V |
2411121101_KIA-Semicon-Tech-KNH2908B_C2924928.pdf
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