Power Switching P Channel MOSFET KEXIN SI2305 with 20V Drain Source Voltage and Low On Resistance
Key Attributes
Model Number:
SI2305
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
44mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
800mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
210pF
Number:
1 P-Channel
Output Capacitance(Coss):
375pF
Input Capacitance(Ciss):
1.245nF
Pd - Power Dissipation:
1.38W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SI2305
Package:
SOT-23-3
Product Description
Product Overview
The SI2305 is a P-Channel MOSFET designed for various applications. It features a drain-source voltage of -20V and low on-state resistance at different gate-source voltages, making it suitable for efficient power switching.
Product Attributes
- Brand: Kexin
- SMD Type: SOT-23-3
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-source voltage | VDS | -20 | V | |||
| Gate-source voltage | VGS | ±10 | V | |||
| Continuous drain current (TA=25°C) | ID | -3.5 | A | |||
| Continuous drain current (TA=70°C) | ID | -2.8 | A | |||
| Pulsed drain current | IDM | -12 | A | |||
| Power dissipation (TA=25°C) | PD | 1.25 | W | |||
| Power dissipation (TA=70°C) | PD | 0.8 | W | |||
| Thermal Resistance Junction-to-Ambient | RθJA | 130 | °C/W | |||
| Operating junction and storage temperature range | Tj,Tstg | -55 | +150 | °C | ||
| Drain-source breakdown voltage | VDSS | VGS = 0 V, ID = -250 µA | -20 | V | ||
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = -1 mA | -0.45 | -0.8 | -1.2 | V |
| Gate-body leakage | IGSS | VDS = -20 V, VGS = 0 V | -10 | µA | ||
| Gate-body leakage | IGSS | VDS = 0 V, VGS = ±10 V | ±100 | nA | ||
| Drain-source on-state resistance | rDS(on) | VGS = -4.5 V, ID = -3.5 A | 0.044 | 0.052 | Ω | |
| Drain-source on-state resistance | rDS(on) | VGS = -2.5 V, ID = -3.0 A | 0.060 | 0.071 | Ω | |
| Drain-source on-state resistance | rDS(on) | VGS = -2.0 V, ID = -2.0 A | 0.087 | 0.108 | Ω | |
| Forward transconductance | gfs | VDS = -5 V, ID = -3.5 A | 8.5 | S | ||
| Input capacitance | Ciss | VDS = -10V, VGS = 0 V, f = 1 MHz | 1245 | pF | ||
| Output capacitance | Coss | VDS = -10V, VGS = 0 V, f = 1 MHz | 375 | pF | ||
| Reverse transfer capacitance | Crss | VDS = -10V, VGS = 0 V, f = 1 MHz | 210 | pF | ||
| Total gate charge | Qg | VDD = -5V, RL = 10 Ω, ID = -1A, VGEN = -4.5V, RG = 10 Ω | 10 | 15 | nC | |
| Gate-source charge | Qgs | VDD = -5V, RL = 10 Ω, ID = -1A, VGEN = -4.5V, RG = 10 Ω | 2 | nC | ||
| Gate-drain charge | Qgd | VDD = -5V, RL = 10 Ω, ID = -1A, VGEN = -4.5V, RG = 10 Ω | 2 | nC | ||
| Turn-on Delay time | td(on) | VDD = -5V, RL = 10 Ω, ID = -1A, VGEN = -4.5V, RG = 10 Ω | 13 | 20 | ns | |
| Turn-on Rise time | tr | VDD = -5V, RL = 10 Ω, ID = -1A, VGEN = -4.5V, RG = 10 Ω | 25 | 40 | ns | |
| Turn-off Delay time | td(off) | VDD = -5V, RL = 10 Ω, ID = -1A, VGEN = -4.5V, RG = 10 Ω | 55 | 80 | ns | |
| Turn-off Fall time | tf | VDD = -5V, RL = 10 Ω, ID = -1A, VGEN = -4.5V, RG = 10 Ω | 19 | 35 | ns | |
| Continuous source current (diode conduction) | IS | -1.6 | A | |||
| Diode forward voltage | VSD | IS = -1.6 A, VGS = 0 V | -1.2 | V |
2409101356_KEXIN-SI2305_C382302.pdf
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