Low On Resistance N Channel MOSFET KEXIN 2KK6009DFN with 20V Drain Source Voltage in DFN1006 3 Package

Key Attributes
Model Number: 2KK6009DFN
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
800mΩ@1.8V,0.45A
Gate Threshold Voltage (Vgs(th)):
350mV
Reverse Transfer Capacitance (Crss@Vds):
15pF@16V
Number:
1 N-channel
Input Capacitance(Ciss):
120pF@16V
Pd - Power Dissipation:
100mW
Gate Charge(Qg):
-
Mfr. Part #:
2KK6009DFN
Package:
DFN1006-3
Product Description

Product Overview

The 2KK6009DFN is an N-Channel MOSFET in a DFN1006-3 SMD package. It features a 20V Drain-Source Voltage and a continuous Drain Current of 0.75A. This MOSFET offers low On-Resistance at various Gate-Source Voltages, making it suitable for a range of electronic applications.

Product Attributes

  • Brand: Kexin
  • Type: N-Channel MOSFET
  • Package: DFN1006-3
  • Origin: www.kexin.com.cn

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Electrical CharacteristicsBVDSSID = 250 A, VGS = 0V20V
IDSSVDS = 20 V, VGS = 0 V1A
IGSSVGS = 10 V, VDS = 0 V20A
VGS(th)VDS = VGS , ID = 250A0.351.1V
RDS(On)VGS = 2.5 V, ID = 0.55 A450m
VGS = 4.5 V, ID = 0.65 A380m
VGS = 1.8 V, ID = 0.45 A800m
Dynamic ParametersCissVDS = 16 V, VGS = 0 V, f = 1 MHz79120pF
Coss1320pF
Crss915pF
Switching Parameterstd(on)VGS = 10V, VDD = 4.5 V, ID = 0.5A, RGEN = 10 6.7ns
tr4.8ns
td(off)17.3ns
tf7.4ns
Absolute Maximum RatingsVDS20V
VGS10V
IDNote 10.75A
IDMPulsed Drain Current (tp=10s)1.8A
PDNote 1100mW
RJAThermal Resistance, Junction-to-Ambient (Note 1)1250/W
TJ150
TstgStorage Temperature Range-55150

2410121742_KEXIN-2KK6009DFN_C499621.pdf

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