P Channel MOSFET SOP 8 Package Featuring Low On Resistance KEXIN AO4407 Suitable Electronic Applications
Key Attributes
Model Number:
AO4407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@20V
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
295pF
Number:
1 P-Channel
Output Capacitance(Coss):
370pF
Input Capacitance(Ciss):
2.6nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
-
Mfr. Part #:
AO4407
Package:
SOP-8
Product Description
Product Overview
The AO4407 is a P-Channel MOSFET designed for various electronic applications. It features a low on-resistance and is available in a SOP-8 SMD package.
Product Attributes
- Brand: Kexin (Implied from URL)
- SMD Type: SOP-8
- Origin: China (Implied from URL)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -30 | V | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=25V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS ID=-250A | -1.7 | -2.8 | V | |
| On state drain current | ID(ON) | VGS=-10V, VDS=-5V | -60 | A | ||
| Forward Transconductance | gFS | VDS=-5V, ID=-10.5A | 27 | S | ||
| Input Capacitance | Ciss | VGS=0V, VDS=0V, f=1MHz | 2060 | 2600 | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=0V, f=1MHz | 370 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=0V, f=1MHz | 295 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 1.2 | 2.4 | ||
| Total Gate Charge | Qg | VGS=-10V, VDS=-15V, ID=-12A | 24 | 36 | nC | |
| Gate Source Charge | Qgs | VGS=-10V, VDS=-15V, ID=-12A | 4.6 | nC | ||
| Gate Drain Charge | Qg d | VGS=-10V, VDS=-15V, ID=-12A | 10 | nC | ||
| Turn-On DelayTime | td(on) | VGS=-10V, VDS=-15V, ID=-12A | 11 | ns | ||
| Turn-On Rise Time | tr | VGS=-10V, VDS=-15V, ID=-12A | 9.4 | ns | ||
| Turn-Off DelayTime | td(off) | VGS=-10V, VDS=-15V, ID=-12A | 24 | ns | ||
| Turn-Off Fall Time | tf | VGS=-10V, VDS=-15V, ID=-12A | 12 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=-12A, dI/dt=100A/s | 30 | 40 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=-12A, dI/dt=100A/s | 22 | nC | ||
| Maximum Body-Diode Continuous Current | IS | -4 | A | |||
| Diode Forward Voltage | VSD | IS=-1A,VGS=0V | -1 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V | -1 | A | ||
| On-Resistance | RDS(On) | VGS=-20V, ID=-12A | 13 | m | ||
| On-Resistance | RDS(On) | VGS=-10V, ID=-12A | 14 | m | ||
| On-Resistance | RDS(On) | VGS=-5V, ID=-7A | 30 | m | ||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 25 | V | |||
| Continuous Drain Current | ID | TA=25C | -12 | A | ||
| Continuous Drain Current | ID | TA=70C | -10 | A | ||
| Pulsed Drain Current | IDM | -60 | A | |||
| Avalanche Current | IAS,IAR | 26 | A | |||
| Avalanche energy | EAS,EAR | L=0.3mH | 101 | mJ | ||
| Thermal Resistance.Junction- to-Case | RthJC | Steady-State | 24 | /W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | Steady-State | 75 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Junction Storage Temperature Range | Tstg | -55 | 150 | |||
| Power Dissipation | PD | TA=25C | 3.1 | W | ||
| Power Dissipation | PD | TA=70C | W |
2410122006_KEXIN-AO4407_C382328.pdf
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