Power switching N Channel MOSFET KEXIN AO3416 with low on resistance and robust electrical properties
Key Attributes
Model Number:
AO3416
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.5A
RDS(on):
26mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
87pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
1.65nF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
AO3416
Package:
SOT-23-3
Product Description
Product Overview
This N-Channel Enhancement MOSFET is designed for various applications requiring efficient power switching. It features a low on-resistance and robust electrical characteristics, making it suitable for demanding electronic circuits.
Product Attributes
- Brand: Kexin
- Origin: China
- SMD Type: AO3416 (KO3416)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250uA, VGS=0V | 20 | V | ||
| VDS=20V, VGS=0V | 1 | V | ||||
| VDS=20V, VGS=0V, Ta=70 | 5 | V | ||||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=8V | 10 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250uA | 0.4 | 0.7 | 1.1 | V |
| On-State Drain Current | ID(on) | VDS =5 V, VGS = 4.5 V | 30 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=8V | 10 | uA | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=4.5V, ID=6.5A | 16 | 22 | m | |
| VGS=2.5V, ID=5.5A | 18 | 26 | m | |||
| VGS=1.8V, ID=5A | 21 | 34 | m | |||
| Forward Transconductance | gFS | VDS=5V, ID=6.5A | 50 | S | ||
| Input Capacitance | Ciss | VDS=10V, VGS=0V,f=1MHz | 1295 | 1650 | pF | |
| Output Capacitance | Coss | VDS=10V, VGS=0V,f=1MHz | 160 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=10V, VGS=0V,f=1MHz | 87 | pF | ||
| Gate Resistance | Rg | VGS=0V,VDS=0V,f=1MHz | 1.8 | |||
| Total Gate Charge | Qg | VDS=10V, ID=6.5A | 10 | nC | ||
| Gate Source Charge | Qgs | VDS=10V, ID=6.5A | 4.2 | nC | ||
| Gate Drain Charge | Qg | VDS=10V, ID=6.5A | 2.6 | nC | ||
| Turn-On DelayTime | td(on) | VDS=10V, ,VGEN=4.5V RL=1.54,RG=3 | 280 | ns | ||
| Turn-On Rise Time | tr | VDS=10V, ,VGEN=4.5V RL=1.54,RG=3 | 328 | ns | ||
| Turn-Off DelayTime | td(off) | VDS=10V, ,VGEN=4.5V RL=1.54,RG=3 | 3.76 | s | ||
| Turn-Off Fall Time | tf | VDS=10V, ,VGEN=4.5V RL=1.54,RG=3 | 2.24 | s | ||
| Body Diode Reverse Recovery Time | trr | IF= 6.5A, dI/dt= 100A/s | 31 | 41 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF= 6.5A, dI/dt= 100A/s | 6.8 | nC | ||
| Maximum Body-Diode Continuous Current | IS | 2 | A | |||
| Diode Forward Voltage | VSD | IS=1.0A,VGS=0V | 0.62 | 1 | V | |
| Continuous Drain Current | ID | Ta=25C | 6.5 | A | ||
| Ta=70C | 5.2 | A | ||||
| Pulsed Drain Current | IDM | t10sec | 30 | A | ||
| Power Dissipation | PD | Ta=25C | 1.4 | W | ||
| Ta=70C | 0.9 | W | ||||
| Thermal Resistance.Junction- to-Ambient | RthJA | Steady State | 80 | C/W | ||
| Thermal Resistance.Junction-to-Foot | RthJF | t10sec | 90 | 125 | C/W | |
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | to | 150 | C | |
| Gate-Source Voltage | VGS | -8 | to | +8 | V | |
| Drain-Source Voltage | VDS | 20 | V |
2410122018_KEXIN-AO3416_C382320.pdf
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