Power Switching MOSFET with N Channel and P Channel Configurations KEXIN AO6601 SOT 23 6 Package Device
Key Attributes
Model Number:
AO6601
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@2.5V,2A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
25pF@15V
Number:
-
Input Capacitance(Ciss):
285pF@30V
Pd - Power Dissipation:
1.15W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
AO6601
Package:
SOT-23-6
Product Description
Product Overview
The AO6601 (KO6601) is a complementary trench MOSFET designed for various applications. It offers both N-channel and P-channel configurations, providing flexibility for circuit design. Key features include a drain-source voltage of 30V for N-channel and -30V for P-channel, with significant continuous drain current capabilities. The device boasts low on-resistance values at different gate-source voltages, making it efficient for power switching applications.
Product Attributes
- Brand: Kexin
- Origin: China (implied by www.kexin.com.cn)
- SMD Type: SOT-23-6
Technical Specifications
| Parameter | N-Channel (AO6601) | P-Channel (KO6601) | Unit |
| Drain-Source Breakdown Voltage (VDS) | 30 | -30 | V |
| Gate-Source Voltage (VGS) | 30 (Max) | 30 (Max) | V |
| Continuous Drain Current (ID) @ TA=25C | 3.4 (VGS=10V) | -2.3 (VGS=-10V) | A |
| RDS(ON) @ VGS=10V | 60 (Typ, VGS=10V) | 115 (Typ, VGS=-10V) | m |
| RDS(ON) @ VGS=4.5V | 70 (Typ, VGS=4.5V) | 150 (Typ, VGS=-4.5V) | m |
| RDS(ON) @ VGS=2.5V | 90 (Typ, VGS=2.5V) | 200 (Typ, VGS=-2.5V) | m |
| Junction Temperature (TJ) | 150 (Max) | 150 (Max) | C |
| Storage Temperature Range (Tstg) | -55 to 150 | -55 to 150 | C |
| Power Dissipation (PD) @ TA=25C | 1.15 | 1.15 | W |
| Thermal Resistance Junction-to-Ambient (RthJA) | 110 | 110 | C/W |
| Thermal Resistance Junction-to-Lead (RthJL) | 80 | 80 | C/W |
| Input Capacitance (Ciss) | 182-285 (Typ) | 205-315 (Typ) | pF |
| Output Capacitance (Coss) | 25-45 (Typ) | 25-50 (Typ) | pF |
| Reverse Transfer Capacitance (Crss) | 10-25 (Typ) | 10-30 (Typ) | pF |
| Gate Resistance (Rg) | 0.9-2.7 (Typ) | 4-12 (Typ) | |
| Total Gate Charge (Qg) @ 10V | 10-12 (Typ) | 4.5-7 (Typ) | nC |
| Body Diode Reverse Recovery Time (trr) | 12 (Typ) | 15 (Typ) | ns |
| Maximum Body-Diode Continuous Current (IS) | 1.5 (Typ) | -1.5 (Typ) | A |
2410122021_KEXIN-AO6601_C489379.pdf
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